Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Step type infrared detector

An infrared detector, step-type technology, applied in the field of infrared detection, can solve the problems of low performance of infrared detectors, low pixel scale, poor consistency, etc., and achieve the effect of reducing process difficulty, small chip area, and low cost

Active Publication Date: 2021-09-28
BEIJING NORTH GAOYE TECH CO LTD
View PDF10 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] In order to solve the above technical problems or at least partly solve the above technical problems, the present disclosure provides a stepped infrared detector, which solves the problems of low performance, low pixel scale, low yield and poor consistency of traditional MEMS process infrared detectors. , which effectively reduces the degree of depression in the middle region of the sacrificial layer, optimizes the planarization degree of the entire infrared detector, and improves the structural stability of the infrared detector

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Step type infrared detector
  • Step type infrared detector
  • Step type infrared detector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0056] In order to more clearly understand the above objects, features and advantages of the present disclosure, the solutions of the present disclosure will be further described below. It should be noted that, in the case of no conflict, the embodiments of the present disclosure and the features in the embodiments can be combined with each other.

[0057] In the following description, many specific details are set forth in order to fully understand the present disclosure, but the present disclosure can also be implemented in other ways than described here; obviously, the embodiments in the description are only some of the embodiments of the present disclosure, and Not all examples.

[0058] figure 1 A schematic diagram of a three-dimensional structure of an infrared detector pixel provided by an embodiment of the present disclosure, figure 2 A schematic cross-sectional structure diagram of an infrared detector pixel provided by an embodiment of the present disclosure. com...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a step type infrared detector. A CMOS measurement circuit system and a CMOS infrared sensing structure in the infrared detector are both prepared by using a CMOS process, and in the infrared detector, the position, corresponding to a columnar structure, of the surface, close to the CMOS measurement circuit system, of a suspended micro-bridge structure is in a stepped shape. The surface, not in contact with the columnar structure, of the suspended micro-bridge structure is higher than the surface, in contact with the columnar structure, of the suspended micro-bridge structure, the columnar structure is a solid columnar structure, and the reinforcing structure corresponds to the columnar structure and is located on the side, away from the CMOS measuring circuit system, of the columnar structure. According to the technical scheme, the problems of low performance, low pixel scale, low yield, poor consistency and the like of a traditional MEMS process infrared detector are solved, the sinking degree of the middle area of the sacrificial layer is effectively reduced, the planarization degree of the whole infrared detector is optimized, and the structural stability of the infrared detector is improved.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, in particular to a stepped infrared detector. Background technique [0002] Surveillance market, automotive auxiliary market, home furnishing market, intelligent manufacturing market, and mobile phone applications all have strong demand for uncooled high-performance chips, and have certain requirements for chip performance, performance consistency, and product prices. It is estimated that there is a potential demand of more than 100 million chips every year, but the current process scheme and architecture cannot meet the market demand. [0003] At present, the infrared detector adopts the method of combining the measurement circuit and the infrared sensing structure. The measurement circuit is prepared by CMOS (Complementary Metal-Oxide-Semiconductor, Complementary Metal Oxide Semiconductor) technology, and the infrared sensing structure is prepared by MEMS (Micro-Electro-Semi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01J5/24
CPCG01J5/24Y02P70/50
Inventor 翟光杰潘辉武佩翟光强
Owner BEIJING NORTH GAOYE TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com