Semiconductor structure and forming method of semiconductor structure

Abstract

The invention discloses a semiconductor structure and a forming method of the semiconductor structure, and the structure comprises the steps: a substrate comprises a first surface and a second surface which are opposite, and comprises a plurality of active regions which are separated from each other, the plurality of active regions are arranged along a first direction and are parallel to a second direction, and the first direction is perpendicular to the second direction; the word line gate structures are located in the active regions, extend from the first surface to the second surface and are arranged in the second direction, and the word line gate structures penetrate through the active regions in the first direction; the first isolation structure is located in the substrate, the word line gate structures are located on the two sides of the first isolation structure, and the first isolation structure extends from the second surface of the substrate to the first surface of the substrate; the bit line structures are located on the first surface of the substrate, are electrically connected with the active region, are arranged in the first direction and are parallel to the second direction; and a plurality of capacitor structures located on the second surface of the substrate, wherein the capacitor structures are electrically connected with the active region. The performance of the structure is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a method for forming the semiconductor structure. Background technique [0002] Dynamic Random Access Memory (Dynamic Random Access Memory, referred to as DRAM) is a semiconductor memory, the main working principle is to use the amount of charge stored in the capacitor to represent whether a binary bit (bit) is 1 or 0. [0003] The basic storage unit of dynamic random access memory (DRAM) is composed of a transistor and a storage capacitor, while the storage array is composed of multiple storage cells. Therefore, the size of the memory chip area depends on the size of the basic storage unit. [0004] The structure of the existing dynamic random access memory still needs to be improved. Contents of the invention [0005] The technical problem solved by the present invention is to provide a semiconductor structure and a method for forming...

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Problems solved by technology

[0004] The structure of the existing dynamic random access memory needs to be improved

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