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Packaging method of film bulk acoustic resonator

A thin-film bulk acoustic wave and packaging method technology, which is applied to electrical components, impedance networks, etc., can solve the problems of high production cost and complicated packaging process of thin-film bulk acoustic wave resonators, and achieves simplified device production costs, good acoustic wave confinement, and simplification. The effect of the preparation process

Pending Publication Date: 2021-10-08
杭州树芯电子科技有限公司
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  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problems of complicated packaging process and high production cost of traditional film bulk acoustic resonators, the present invention provides a film bulk acoustic resonator (FBAR) packaging method, which can optimize the packaging and manufacturing process of film bulk acoustic resonators and reduce product production costs , and the thickness of the FBAR device can be reduced by about one time, which realizes the thinning of the device and improves the market competitiveness of the product

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Embodiment Construction

[0036] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention.

[0037]A packaging method for a thin film bulk acoustic resonator, the packaged thin film bulk acoustic resonator includes a substrate 100 and a piezoelectric oscillation stack; the piezoelectric oscillation stack includes a first electrode 102, a piezoelectric layer 103 and a second electrode 104; The substrate 100 is provided with a first cavity; the first electrode 102 is located on the substrate 100 and covers the first cavity; the piezoelectric layer 103 covers the first electrode 102 and the substrate 100; the second electrode 104 is located in the piezoelectric layer 103, such as figure 1 Shown; the specific steps of the method are as follows:

[0038] Step 1: If figure 2 As shown, a packaging sacrificial layer 105 is deposited on the surface of the second electrode 1...

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Abstract

The invention discloses a packaging method of a film bulk acoustic resonator. A traditional FBAR packaging technology is complex, and the dependence degree on expensive equipment is very high. According to the invention, the cavity structure required by the work of the FBAR device is formed on the second electrode of the FBAR piezoelectric oscillation stack through a simple process, the purpose of increasing the strength of the cavity is achieved by adding the dielectric layer, the cavity designed in the cavity release and chip packaging process is ensured not to collapse, and the performance of the device is not influenced. Compared with a traditional complicated film bulk acoustic resonator packaging process, the packaging preparation process of the film bulk acoustic resonator can be effectively simplified, the product manufacturing period is shortened, and use of part of expensive equipment is avoided.

Description

technical field [0001] The invention belongs to the technical field of thin film bulk acoustic wave resonators, and in particular relates to a packaging method of thin film bulk acoustic wave resonators. Background technique [0002] With the rapid development of mobile communication technology, the market demand for high frequency band resonators and filters is increasing. Compared with traditional microwave ceramic resonators and surface acoustic wave resonators, film bulk acoustic resonators (FBARs) have the advantages of small volume, low loss, high quality factor, large power capacity, and high resonance frequency. Therefore, in related fields, especially High-frequency communication has broad application prospects and has become a research hotspot in the industry and academia. [0003] There are three main types of mainstream FBAR structures: back-etched type, air-gap type, and solid-state assembly type. The back-etched structure adopts bulk micromachining technology...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/02H03H9/10H03H3/02
CPCH03H9/02015H03H9/1014H03H3/02H03H2003/023
Inventor 董树荣轩伟鹏金浩骆季奎
Owner 杭州树芯电子科技有限公司
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