Beta-Ga2O3 film and preparation method thereof

A -ga2o3 thin film technology, applied in the field of β-Ga2O3 thin film and its preparation, can solve the problems of poor film quality and large lattice mismatch

Active Publication Date: 2021-10-19
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004]However, due to the presence of relatively large gaps between the heterogeneous substrate and the β-Ga2O3 Large lattice mismatch, therefore, poor quality of β-Ga2O3 thin films prepared by prior art based on heterogeneous substrates

Method used

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  • Beta-Ga2O3 film and preparation method thereof
  • Beta-Ga2O3 film and preparation method thereof
  • Beta-Ga2O3 film and preparation method thereof

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Embodiment 1

[0018] See figure 1 , figure 1 It is a kind of β-Ga provided by the embodiment of the present invention 2 o 3 Schematic of the film structure. The β-Ga 2 o 3 Thin films from bottom to top include: heterogeneous substrate 1, β-Ga 2 o 3 Buffer layer 2, pulsed β-Ga 2 o 3 buffer layer 3 and β-Ga 2 o 3 Epitaxial layer 4.

[0019] The present invention is based on substrate epitaxial growth of β-Ga 2 o 3 epitaxial layer to obtain β-Ga 2 o 3 thin film, the material used for the substrate is non-Ga 2 o 3 Gallium oxide, therefore, the substrate is called a heterogeneous substrate. The present invention is described by taking a Si silicon substrate, or a SiC silicon carbide substrate as an example.

[0020] Due to the heterogeneous substrate and β-Ga 2 o 3 The epitaxial layer is made of different materials, the crystal structures of the two are different, and the lattice constants cannot be completely matched. The epitaxial growth of β-Ga based on a heterogeneous sub...

Embodiment 2

[0026] See figure 2 , figure 2 It is a kind of β-Ga provided by the embodiment of the present invention 2 o 3 Schematic diagram of a film preparation method, the method comprising:

[0027] Step 1: Perform thermal decomposition treatment on the heterogeneous substrate according to the thermal decomposition parameters to obtain the target heterogeneous substrate, wherein gallium particles are deposited on the surface of the target heterogeneous substrate, and the thermal decomposition parameters include: - Triethylgallium flow parameters, thermal decomposition pressure parameters, thermal decomposition temperature parameters.

[0028] When the buffer layer is obtained based on a foreign substrate, the foreign substrate needs to be thermally decomposed to deposit metal gallium on the surface of the foreign substrate.

[0029] Optionally, the step 1 includes:

[0030] Step 1-1: Putting the foreign substrate into a preset reaction chamber.

[0031] Step 1-2: According to t...

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Abstract

The invention discloses a beta-Ga2O3 film and a preparation method thereof. The beta-Ga2O3 film comprises a heterogeneous substrate, a beta-Ga2O3 buffer layer, a pulse beta-Ga2O3 buffer layer and a beta-Ga2O3 epitaxial layer from bottom to top. According to the beta-Ga2O3 film and the preparation method thereof, the quality of the prepared beta-Ga2O3 film can be effectively improved.

Description

technical field [0001] The invention belongs to the field of semiconductor materials, in particular to a β-Ga 2 o 3 Thin films and methods for their preparation. Background technique [0002] β-Ga 2 o 3 Thin films have great application potential in high-power and high-breakdown devices. Therefore, with the wide application of high-power and high-breakdown devices, β-Ga 2 o 3 The requirements for thin films are also getting higher and higher. [0003] In the prior art, β-Ga 2 o 3 The preparation of thin films, however, the homogeneous substrate or sapphire substrate is not easy to obtain, the cost is high, and the thermal conductivity is poor. In order to overcome the above problems, the field proposed a method based on heterogeneous substrates to prepare β-Ga 2 o 3 Thin-film solutions, eg, silicon substrates. [0004] However, due to the heterogeneous substrate and β-Ga 2 o 3 There is a large lattice mismatch between the epitaxial layers. Therefore, the prior a...

Claims

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Application Information

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IPC IPC(8): H01L21/02
CPCH01L21/02565H01L21/02483H01L21/02516H01L21/0237H01L21/0262
Inventor张雅超张涛冯倩张进成马佩军郝跃
OwnerXIDIAN UNIV