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Magnetic random access memory

A random access memory and magnetic technology, applied in the field of memory, can solve the problems of paying, doubling, and high cost, and achieve the effect of reducing the total resistance of wires, low manufacturing cost, and high reliability

Pending Publication Date: 2021-10-26
SHANGHAI CIYU INFORMATION TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, although this method reduces the equivalent resistance of the wire, the write circuit and the column MUX switch (Write Driver and COL MUX in the figure) need to be doubled, and a large cost is paid

Method used

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  • Magnetic random access memory
  • Magnetic random access memory
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Embodiment Construction

[0029] Please refer to the drawings in the accompanying drawings, wherein like reference numerals refer to like components. The following description is based on illustrated specific embodiments of the present application, which should not be construed as limiting other specific embodiments of the present application that are not described in detail here.

[0030] The following descriptions of the various embodiments refer to the attached drawings to illustrate specific embodiments that the present application can be implemented in. The directional terms mentioned in this application, such as "up", "down", "front", "rear", "left", "right", "inside", "outside", "side", etc., are for reference only The orientation of the attached schema. Therefore, the directional terms used are used to illustrate and understand the application, but not to limit the application.

[0031] The terms "first", "second", "third", etc. (if any) in the description and claims of this application and t...

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Abstract

The invention provides a magnetic random access memory with a double-end column address decoder. The magnetic random access memory is suitable for a magnetic random access memory chip architecture. The read-write circuit controls a word line and a bit line connected with the selected storage array through the row address decoder and the column address decoder. The structure of the column address decoder is improved in that a source line and a bit line selection switch are divided and are respectively arranged on two opposite sides of a storage array. Compared with the prior art, the total resistance of the wires under the worst condition is reduced, the resistance difference of the wires in different rows is reduced, a read-write circuit and a line selection switch do not need to be additionally arranged, and the invention has the advantages of simple structure, low manufacturing cost, high reliability and the like.

Description

technical field [0001] The invention relates to the field of memory technology, in particular to a magnetic random access memory equipped with a dual-end column address decoder. Background technique [0002] The row address decoder circuit converts multi-bit input signals into multi-bit output signals, so as to achieve the purpose of selecting word lines of memory array units. At the same time, the column address decoder selects the column that needs to be read and written. When performing a write operation, a sufficiently high voltage is applied to the memory cell in both directions according to the input data. When performing a read operation, it is necessary to measure the resistance of the memory cell. [0003] However, the resistance of the bit line and the source line is much higher when the existing array layout is combined with more advanced technologies, such as 28nm or higher semiconductor process nodes. This causes (1) the total resistance on the wire is too la...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/16
CPCG11C11/1655G11C11/1657
Inventor 李志怀戴瑾
Owner SHANGHAI CIYU INFORMATION TECH
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