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Gold connecting line of semiconductor device and production method thereof

A production method and technology for connecting wires, applied in conductors, connections, insulated conductors, etc., can solve problems such as inability to semiconductor devices, affect equipment operation, copper core damage, etc. damage effect

Pending Publication Date: 2021-10-29
郑伟杰
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a gold connection wire for a semiconductor device and a production method thereof, wherein one purpose is to have an anti-oxidation outer layer and a copper wire protection layer, and to solve the problem that the existing gold connection wire is used for a long time. After use, it is easy to be oxidized by the outside air, causing damage to the internal copper core; another purpose is to solve the problem that the existing gold connecting wire is generally susceptible to electromagnetic interference caused by current when it is in use, which affects the equipment. Operation, the problem that the semiconductor device cannot be operated normally, so that when the gold connecting wire is used, it can prevent the current from generating electromagnetic force when it flows, avoid the electromagnetic effect on the operation of the equipment, and make the semiconductor device can operate normally. The purpose is to have a connecting wire protection end, a connecting wire fixing ring, and a connecting wire fixing clip, which is convenient to solve the problem that the end of the connecting wire is prone to breakage during the long-term use of the existing gold connecting wire, and the copper wire inside is easy to break. The problem of being damaged, through the combination of the above structures, the gold connecting wire can be used for a long time to avoid the breakage of the end of the connecting wire and prevent the internal copper wire from being damaged

Method used

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  • Gold connecting line of semiconductor device and production method thereof
  • Gold connecting line of semiconductor device and production method thereof
  • Gold connecting line of semiconductor device and production method thereof

Examples

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Effect test

Embodiment 1

[0043] First aspect, such as figure 1 - Figure 4 As shown, the present invention provides a gold connecting wire of a semiconductor device, comprising a connecting wire main body 1, a fixed connection end 3, a semiconductor connector 4 and a semiconductor end 5, and the left side of the connecting wire main body 1 is fixedly connected with Fixed connection end 3, semiconductor connector 4 is fixedly installed on the left side of fixed connection end 3, semiconductor terminal 5 is fixedly installed on the left side of semiconductor connector 4, and the surface of connecting line main body 1 is provided with connection Wire protection end 2, the connecting wire protection end 2 is used to protect the end of the connecting wire body 1 to prevent breakage, the right side of the connecting wire body 1 is provided with an electromagnetic reducer 6, and the electromagnetic reducer 6 is used to protect the connecting wire The current output by the main body 1 is electromagnetically ...

Embodiment 2

[0045] Such as Figure 1-4 As shown, on the basis of Embodiment 1, the present invention provides a technical solution: a copper wire protective layer 13 is provided inside the connecting wire main body 1 and on the inner side of the anti-electromagnetic layer 11, and the surface of the copper wire protective layer 13 is fixedly installed On the inner wall of the anti-electromagnetic layer 11, and the left and right ends of the copper wire protective layer 13 are fixedly installed on the inner wall of the connecting wire main body 1, the inside of the copper wire protective layer 13 is provided with copper wires 12, and the copper wire protective layer 13 can The copper wire 12 has a protective effect to prevent the copper wire 12 from being damaged during use. The surface of the copper wire 12 is fixedly installed on the inner wall of the copper wire protective layer 13, and the left and right ends of the copper wire 12 are fixedly installed on the connecting wire body 1. On ...

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Abstract

The invention discloses a gold connecting line of a semiconductor device and a production method of the gold connecting line, and belongs to the technical field of semiconductor device equipment. The gold connecting line comprises a connecting line body, a fixed connecting end, a semiconductor connector and a semiconductor end, and the left side of the connecting line body is fixedly connected with the fixed connecting end; the semi-conductor connector is fixedly installed on the left side of the fixed connecting end, a semi-conductor end is fixedly installed on the left side of the semi-conductor connector, and a connecting line protection end is arranged on the surface of the connecting line body and used for protecting the end of the connecting line body and preventing breakage. According to the invention, the anti-oxidation outer layer and the copper wire protection layer are combined, so that the problem that an internal copper core is damaged due to the fact that an existing gold connection wire is easily oxidized by external air after being used for a long time is conveniently solved; on the basis of the structural combination, when the gold connecting line is in use, the anti-oxidation capability of the surface to air is improved, and the internal copper core is prevented from being damaged.

Description

technical field [0001] The invention relates to a gold connection wire and a production method thereof, relates to the technical field of semiconductor device equipment, in particular to a gold connection wire of a semiconductor device and a production method thereof. Background technique [0002] Currently, connecting wires made of high-purity 4N-type gold (purity >99.99% by mass) and having a wire diameter of about 20 to about 50 microns are used to connect electrodes on semiconductor elements with external leads. A thermocompression bonding system combined with ultrasound is usually used as a technique for connecting wires, which requires conventional connecting devices and capillary clamps for inserting the connecting wires for the connection. One end of the connecting wire is heated and melted by arc heat supply to form a ball using surface tension, which is crimped to the electrode of the semiconductor element heated at 150 to 300C, and then, the connecting wire is ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01R31/06H01B7/17H01B7/28H01B13/22H01R13/56H01R13/658H01R13/66H01R43/20
CPCH01R31/06H01B7/17H01B7/28H01R13/56H01R13/66H01R13/6683H01R13/658H01R43/20H01B13/22
Inventor 郑伟杰
Owner 郑伟杰
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