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Cleaning agent composition and cleaning method

A composition and cleaning agent technology, applied in the preparation of detergent compositions, non-surface active detergent compositions, detergent mixture compositions, etc., can solve problems such as inconvenient use and corrosion of substrates

Pending Publication Date: 2021-10-29
NISSAN CHEM IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, Patent Document 3 discloses a cleaning agent composition using urea derivatives such as dimethylurea, but since water is used as a solvent, there is a possibility that the substrate may be corroded, and there is a problem that it is inconvenient to use.

Method used

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  • Cleaning agent composition and cleaning method
  • Cleaning agent composition and cleaning method
  • Cleaning agent composition and cleaning method

Examples

Experimental program
Comparison scheme
Effect test

preparation example 1

[0235] Into a 600mL stirring container dedicated to the rotation and revolution mixer, add a base polymer (Wacker Chemie) 150 g, 15.81 g of SiH group-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) with a viscosity of 100 mPa·s as (a2), 1-ethynyl-1- as (A3) 0.17 g of cyclohexanol (manufactured by Wacker Chemie) was stirred for 5 minutes in a rotary mixer.

[0236] To the resulting mixture, 0.33 g of a platinum catalyst (manufactured by Wacker Chemie) as (A2) and vinyl group-containing linear polydimethylsiloxane ( Wacker Chemie) 9.98 g of a 50 mL screw tube was stirred in a rotary revolution mixer for 5 minutes, and 0.52 g of a mixture obtained separately was stirred in a rotary revolution mixer for 5 minutes, and the obtained mixture was subjected to a 300-mesh nylon filter. Filtration gave an adhesive composition. In addition, the viscosity of the adhesive composition measured using the rotational viscometer was 9900 mPa·s.

preparation example 2

[0238] To a 600 mL stirring vessel dedicated to a rotation and revolution mixer, 95 g of vinyl group-containing MQ resin (manufactured by Wacker Chemie) as (a1), 93.4 g of p-menthane (manufactured by Nippon Terpene Chemicals Co., Ltd.) as a solvent, and 1 0.41 g of 1-diphenyl-2-propyn-1-ol (manufactured by Tokyo Chemical Industry Co., Ltd.) was stirred for 5 minutes in a rotary mixer.

[0239] To the obtained mixture, SiH group-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) having a viscosity of 100 mPa·s as (a2) and polydimethylsiloxane containing a SiH group having a viscosity of 200 mPa·s as (a1) were added. Vinyl linear polydimethylsiloxane (manufactured by Wacker Chemie) 29.5 g, viscosity as (B) 1,000,000 mm 2 / s polyorganosiloxane (manufactured by Wacker Chemie, trade name AK1000000), 0.41 g of 1-ethynyl-1-cyclohexanol (manufactured by Wacker Chemie) as (A3), and further stirred for 5 minute.

[0240] Then, to the obtained mixture, 0.20 g of a p...

Embodiment 1

[0243] To 5 g of tetrabutylammonium fluoride trihydrate (manufactured by Kanto Chemical Co., Ltd.), 95 g of N,N,N',N'-tetramethylurea was added as a solvent and stirred to obtain a cleaning composition.

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Abstract

A cleaning agent composition which is used for the purpose of removing an adhesive residue, and which contains a quaternary ammonium salt and a solvent that is composed only of an organic solvent that contains N, N, N', N'-tetra(hydrocarbon) urea.

Description

technical field [0001] The present invention relates to a cleaning agent composition for removing, for example, adhesive residue after temporary bonding of an adhesive layer formed on a semiconductor substrate is removed, and a cleaning method. An adhesive layer obtained using a polysiloxane-based adhesive. Background technique [0002] Conventionally, semiconductor wafers have been integrated in a two-dimensional planar direction, and for the purpose of further integration, a semiconductor integration technology for further integrating (stacking) the planar in a three-dimensional direction has been pursued. This three-dimensional lamination is a technique in which multiple layers are integrated while wiring through silicon vias (TSV: through silicon via). In the case of multilayer integration, the side (ie, the back surface) of each integrated wafer is thinned by grinding, which is opposite to the circuit surface to be formed, and the thinned semiconductor wafers are stack...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C11D7/32H01L21/304C11D7/50
CPCH01L21/31111H01L21/02057H01L21/6835C11D7/5013C11D7/3209C11D7/3272C11D7/263C11D7/247C11D7/267C11D7/261C11D7/3281C11D2111/22C11D7/5022C11D7/5027H01L21/304
Inventor 荻野浩司奥野贵久柄泽凉新城彻也
Owner NISSAN CHEM IND LTD