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Semiconductor structure and forming method thereof

A semiconductor and conductive layer technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as the decline of the electrical performance of semiconductor structures, avoid filling voids, reduce resistance, and benefit performance. Effect

Pending Publication Date: 2021-11-02
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The current formation process of the interconnection structure easily leads to the degradation of the electrical performance of the semiconductor structure

Method used

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  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof

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Embodiment Construction

[0029] It can be known from the background art that the formation process of the interconnection structure in the prior art may easily lead to performance degradation of the semiconductor structure. Now combine a semiconductor structure to analyze the reasons for its performance degradation.

[0030] refer to figure 1 , showing a schematic structural view of a semiconductor structure, the semiconductor structure comprising:

[0031] The first interconnection level (Mx) 11, the first interconnection level (Mx) 11 includes: a substrate (not shown in the figure), a first dielectric layer 21 on the substrate, a first dielectric layer 21 on the substrate The first metal layer 31 inside and the first covering layer 41 located on the first dielectric layer 21;

[0032] The second interconnection level (Mx+1) 12 is located on the first interconnection level (Mx) 11, the second interconnection level includes a second dielectric layer 22, a second interconnection layer located in the ...

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PUM

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Abstract

The invention discloses a semiconductor structure and a forming method thereof. The method comprises the steps of: providing a substrate, wherein a bottom metal layer is formed in the substrate; sequentially forming a first interlayer dielectric layer and a second interlayer dielectric layer on the substrate; forming a first through hole in the first interlayer dielectric layer and the second interlayer dielectric layer, wherein the bottom part of the first through hole exposes the surface of the bottom metal layer; forming a first groove in the second interlayer dielectric layer, wherein the bottom part of the first groove is communicated with the top part of the first through hole; forming a first conductive layer in the first through hole; and forming a first metal interconnection layer in the first groove, wherein the first metal interconnection layer is also located on the first conductive layer. According to the forming method provided by the embodiment of the invention, the resistance of the formed interconnection structure is reduced, and the electrical performance of the semiconductor structure is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the continuous development of integrated circuit manufacturing technology, people's requirements for the integration and performance of integrated circuits are becoming higher and higher. In order to improve integration and reduce costs, the critical dimensions of components are getting smaller and the circuit density inside integrated circuits is increasing. This development makes the surface of the wafer unable to provide enough area to make the required interconnection lines. [0003] In order to meet the requirements of the interconnection line after the critical dimension is reduced, at present, the conduction between different metal layers or the metal layer and the substrate is realized through the interconnection structure. A through hole is an electrical connec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/522H01L23/528H01L21/768
CPCH01L21/76879H01L21/76847H01L21/76831H01L21/76816H01L23/5226H01L23/5283
Inventor 刘继全
Owner SEMICON MFG INT (SHANGHAI) CORP