Red light diode chip for improving electrode adhesion quality and preparation method thereof

Abstract

The disclosure provides a red light diode chip for improving electrode adhesion quality and a preparation method thereof, belonging to the technical field of light emitting diodes. The primary p-electrode connected to the p-welding point is located on the silicon oxide bonding layer, and the surface of the primary p-electrode away from the substrate is flush with the surface of the silicon oxide bonding layer away from the substrate, and the insulating silicon oxide bonding layer itself supports the epitaxial structure as well as a primary p-electrode. The epitaxial structure on the p-electrode and the silicon oxide bonding layer can maintain a relatively complete state and is not easily damaged. Add p solder joints connected to the primary p electrode and n solder joints connected to the primary n electrode. The electrodes and solder joints made of metal materials have better resistance to stress and are difficult to be damaged, ensuring that the epitaxial structure is compatible with electrodes and solder joints. The stable connection between the dots can improve the quality of electrode adhesion to improve the preparation yield of the obtained red light diode chip.

Description

technical field [0001] The disclosure relates to the technical field of light-emitting diodes, in particular to a red light-emitting diode chip that improves electrode adhesion quality and a preparation method thereof. Background technique [0002] Red light emitting diode is a common light source device, which is widely used in remote control, vehicle sensing, closed circuit television, etc., and red light emitting diode chip is the basic structure for preparing red light emitting diode. [0003] Red light emitting diode chips usually include epitaxial wafers and p, n solder joints. The epitaxial wafer includes a support substrate and a p-GaP window layer, p-AlInP confinement layer, multiple quantum well layer, n-AlInP confinement layer, n-AlGaInP current spreading layer, protective layer and Bragg reflection layer stacked on the support substrate in sequence. The mirror, the p soldering point and the n soldering point are respectively connected to the p-GaP window layer a...

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Problems solved by technology

Since the groove is usually etched from the p-GaP window layer to a certain depth, the thickness of the p-GaP window layer at the position connected to the p solder joint is thinner, and the material of the p-GaP window layer itself is relatively brittle, so the p- In the process of soldering the GaP window layer to the supporting substrate, the p-GaP window layer is prone to damage, resulting in poor contact between the p-GaP window layer and the p solder joint, and the problem that the chip does not emit light

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