Preparation method of silicon carbide single crystal
A technology of silicon carbide single and silicon carbide, which is applied in the field of preparation of silicon carbide single crystal, and can solve problems such as difficulty in obtaining silicon carbide single crystal
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[0034] The invention provides a method for preparing a silicon carbide single crystal, which facilitates the preparation of a silicon carbide single crystal with a size of 8-12 inches.
[0035] Please refer to image 3 , the preparation method of silicon carbide single crystal of the present invention comprises: providing silicon substrate, and the size of silicon substrate is 8-12 inches; Epitaxially grows a layer of silicon carbide on silicon substrate; Stripping silicon substrate, to obtain silicon carbide Epitaxial layer; silicon carbide single crystal growth is performed on the silicon carbide epitaxial layer by physical vapor transport method.
[0036] Since the size of the silicon substrate 12 for preparing the silicon carbide epitaxial layer 13 is 8-12 inches, the size of the prepared silicon carbide epitaxial layer 13 is 8-12 inches, and the corresponding 8-12 inch silicon carbide epitaxial layer 13 Silicon carbide single crystals with a size of 8-12 inches can be ea...
Embodiment 1
[0049] A layer of silicon carbide was epitaxially grown on an 8-inch silicon substrate by chemical vapor transport, the gas sources were methane and silane, and the thickness of the epitaxial layer was 100 μm.
[0050] The silicon substrate is completely peeled off from the silicon carbide epitaxial layer by laser lift-off technology. The silicon carbide epitaxial layer remaining after stripping is an 8-inch silicon carbide seed.
[0051] The side of the 8-inch silicon carbide seed crystal stripped from the silicon substrate is bonded to the graphite crucible cover, and the graphite crucible cover bonded with the silicon carbide seed crystal is arranged on the guide tube, so that the silicon carbide seed crystal and the graphite crucible cover are bonded together. The silicon carbide powder in the graphite crucible barrel is opposite; the silicon carbide single crystal is grown in a high temperature thermal field at a temperature of 2000°C to prepare a silicon carbide single c...
Embodiment 2
[0053] A layer of silicon carbide was epitaxially grown on a 12-inch silicon substrate by chemical vapor transport, the gas sources were methane and silane, and the thickness of the epitaxial layer was 120 μm.
[0054] The silicon substrate is completely peeled off from the silicon carbide epitaxial layer by laser lift-off technology. The silicon carbide epitaxial layer remaining after stripping is a 12-inch silicon carbide seed.
[0055] The side of the 12-inch silicon carbide seed crystal stripped from the silicon substrate is bonded to the graphite crucible cover, and the graphite crucible cover bonded with the silicon carbide seed crystal is arranged on the guide tube, so that the silicon carbide seed crystal and the graphite crucible cover are bonded together. The silicon carbide powder in the graphite crucible barrel is opposite; the silicon carbide single crystal is grown in a high-temperature thermal field at a temperature of 2300 ° C to prepare a silicon carbide singl...
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