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Substrate treatment method

A treatment method and substrate technology, which is applied in the manufacture of electrical components, semiconductor/solid-state devices, circuits, etc., can solve the problems of large waste liquid treatment burden, and achieve the effect of reducing the burden of waste liquid treatment and suppressing the burden

Pending Publication Date: 2021-11-09
DAINIPPON SCREEN MTG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in recent years, substrate processing methods that do not use SPM have been sought due to the heavy burden of waste liquid treatment and other reasons.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0084] Figure 5 From the part P1 in the resist film 902 ( Figure 6 ) schematically shows a flowchart of the substrate processing method in the first embodiment. Figure 6 ~ Figure 9 Each of these is a partial cross-sectional view schematically showing the first to fourth steps of the substrate processing method in the first embodiment.

[0085] refer to Figure 6 , first, a wafer 901 provided with a resist film 902 including a portion P1 is prepared. It should be noted that the resist film 902 may have a pattern shape (not shown) on the wafer 901 . In addition, the resist film 902 may be modified by using, for example, an etching mask or an implantation mask. Typically, the removal of the resist film becomes more difficult due to this modification.

[0086] refer to Figure 7 , in step T21( Figure 5 ), the ozone-containing aqueous solution 920 is brought into contact with at least a portion P1 of the resist film 902 . For this purpose, an aqueous solution 920 contai...

Embodiment approach 2

[0129] Figure 19 For the slave substrate processing device ( Figure 1 ~ Figure 3 ) schematically shows a flowchart of the substrate processing method in the second embodiment. This flow is the same as the flow in Embodiment 1 omitting step S20 ( Figure 10 ) corresponding to the process. Therefore, only the points of difference related to this omission will be described below, and the description of the same features as those in Embodiment 1 will be omitted.

[0130] Figure 20 ~ Figure 22 Each is a plan view schematically showing the first to third operations of the substrate processing apparatus in the second embodiment. It should be noted that, in Figure 20 ~ Figure 22 In, for the substrate processing device ( Figure 1 ~ Figure 3 ), only the positions of the spray nozzle 31 and the spray nozzle 41 are shown by dots, and the illustration of other configurations is omitted.

[0131] refer to Figure 20 , first, a wafer 901 ( Figure 6 ) installed in the substrate...

Embodiment approach 3

[0136] Figure 23 For the slave substrate processing device ( Figure 1 ~ Figure 3 ) schematically shows a flowchart of the substrate processing method in the third embodiment. In this embodiment, in step S20 ( Figure 10 : Before Embodiment 1), to the resist film 902 ( Figure 6 ) to irradiate ultraviolet light (UV). The wavelength of ultraviolet light is preferably 190 nm or less, for example, 172 nm. The irradiation of ultraviolet rays can be used with the substrate processing device ( Figure 1 ~ Figure 3 ) different devices to implement. In addition, since the structure other than the above is substantially the same as the structure of Embodiment 1 mentioned above, the same code|symbol is attached|subjected to the same or corresponding element, and description is not repeated. As a modified example, step S10( Figure 23 ) can also be in step S30 ( Figure 19 : Carried out before Embodiment 2).

[0137] According to this embodiment, it is possible to supply ammoni...

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Abstract

When it is intended to remove a resist film relying only on the decomposition activity of ozone, there is a problem that the time of period required for the treatment is prolonged or a problem that, although the detachment of the resist film is promoted by swelling the resist film, the degree of progression of the swelling still has much room for improvement. The purpose of the present invention is to solve these problems and provide a substrate treatment method whereby it becomes possible to remove a resist film from a substrate within a short time while reducing the burden of the treatment of liquid waste. The substrate treatment method comprises the steps: bringing a resist film on a substrate (901) into contact with an ozone-containing aqueous solution (920); and bringing a part (P1) of the resist film which has been already in contact with the ozone-containing aqueous solution (920) into contact with an ammonia-containing aqueous solution (930) that contains ammonia at a higher concentration compared with the ozone-containing aqueous solution (920).

Description

technical field [0001] The present invention relates to substrate processing methods, and more particularly to substrate processing methods for removing resist films from substrates. Background technique [0002] After processing using a resist film on a substrate, the resist film is removed from the substrate in many cases. For the purpose of this treatment, conventionally, a method of supplying a sulfuric acid / hydrogen peroxide mixture (SPM) as a cleaning solution onto the substrate surface has been widely used. However, in recent years, substrate processing methods that do not use SPM have been sought due to the heavy burden of waste liquid treatment and the like. [0003] JP 2010-153442 A (Patent Document 1) discloses a substrate processing method for removing a resist film on a wafer. As an example, it describes that the resist film is removed by supplying the mixed solution of ammonia water and ozone water to a wafer. According to this publication, it is claimed tha...

Claims

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Application Information

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IPC IPC(8): G03F7/42H01L21/027H01L21/304
CPCH01L21/304H01L21/027G03F7/42H01L21/0274
Inventor 山口贵大新庄淳一中野佑太泽崎尚树阿野诚士岩崎晃久
Owner DAINIPPON SCREEN MTG CO LTD