Self-stopping polishing composition and method for bulk oxide planarization
A polishing composition and self-stopping technology, applied in polishing compositions containing abrasives, chemical instruments and methods, aqueous dispersants, etc., can solve problems such as the rate of step height reduction
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[0214](1) In embodiment (1), there is provided a chemical mechanical polishing composition comprising: (a) an abrasive; (b) a self-stopping agent of formula Q-B, wherein Q is a substituted or unsubstituted hydrophobic group , or a group that imparts steric hindrance, B is a binding group, wherein the binding group has the structure: -C(O)-X-OH or -C(O)-OH, wherein X is a C1-C2 alkyl (for example any compound of formula (II), (III) and (IV)); and (c) an aqueous carrier, wherein the pH of the polishing composition is from about 3 to about 9.
[0215] (2) In embodiment (2) there is provided the polishing composition as in embodiment (1), wherein the abrasive is selected from ceria, zirconia and combinations thereof.
[0216] (3) In the embodiment (3), there is provided the polishing composition as in the embodiment (2), wherein the abrasive is cerium oxide.
[0217] (4) In embodiment (4) there is provided a polishing composition as in any one of embodiments (1) to (3), wherein t...
Embodiment 1
[0252] This example illustrates the effect of a self-stopper, optionally in combination with a cationic compound, on the polishing performance of a polishing composition in which it is included.
[0253] The patterned substrates were polished with fourteen polishing compositions (ie, Polishing Compositions 1A-1N). Polishing Compositions 1A-1N were prepared by mixing Abrasive Compositions C1 and C2 (described in Table 1 below) with Additive Formulations F1-F15 (described in Table 2 below) in a ratio of 7:3 by volume. preparation.
[0254] Abrasive compositions C1 and C2 contained cerium oxide abrasive, picolinic acid, and water, as described in Table 1. HC60 and HC30 ceria abrasives are commercially available from Rhodia. The H-30 ceria abrasive is wet-process ceria described in a prior application (US Published Patent Application 2016 / 0257855). Abrasive compositions C1 and C2 each had a pH of 4.2.
[0255] Table 1: Abrasive Composition
[0256]
[0257] Additive formul...
Embodiment 2
[0267] This example illustrates the effect of a self-stopper, optionally in combination with a cationic compound, on the polishing performance of a polishing composition in which it is included.
[0268] The patterned substrates were polished with three polishing compositions (ie, Polishing Compositions 2A-2C). Polishing Compositions 2B and 2C were prepared using the abrasive composition and additive formulation described in Example 1 (7:3 by volume). Composition 2A (comparative) contained only abrasive formulation C2.
[0269] Obtained from Silyb Inc. comprising initially covered in step heights with various widths and densities of approx. TEOS on a patterned silicon substrate (approx. thick features) on an AP-300 with a 300mm CMP platform TM (CTS Co., Ltd.) using IC1010 TM The pads were polished multiple times at 3 psi downforce with platform and head speeds of 93 rpm and 87 rpm, respectively. The total flow rate of the polishing composition was 250 mL / min.
[0270] ...
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Abstract
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