High-temperature-resistant self-powered wide bandgap power device driving control circuit

A technology for driving control circuits and control circuits, applied to circuits, electrical components, control/regulation systems, etc., to achieve high-frequency, high-reliability shutdown control, small volume, and reduced number of coil turns

Active Publication Date: 2021-11-12
BEIJING RES INST OF PRECISE MECHATRONICS CONTROLS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved by the present invention is to overcome the shortcomings of the existing normal temperature drive control technology, propose a high temperature resistant self-supplied wide bandgap power device drive control circuit, and solve the problem of wide bandgap power devices used in high temperature and high power density applications. The problem of high-frequency and high-reliability drive control is suitable for the realization of reliable drive functions based on wide-bandgap power devices in power circuits such as switching power supplies, frequency converters, and drives.

Method used

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  • High-temperature-resistant self-powered wide bandgap power device driving control circuit
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  • High-temperature-resistant self-powered wide bandgap power device driving control circuit

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Embodiment

[0043] Such as image 3 As shown, the enhanced driving current control circuit unit includes a resistor R1, an NPN transistor V1, and a PNP transistor V2;

[0044] The input signal to control the wide bandgap power device is connected to one end of the resistor R1, the other end of the resistor R1 is connected to the base of the transistor V1 and the base of the transistor V2, the collector of the transistor V1 is connected to the self-powered VCCP, the emitter of the transistor V1 is connected to the emitter of the transistor V2, and the transistor The collector of V2 is connected to the input side ground signal -Vin, and the emitter of the triode V1 is connected to pin 1 of the input side coil of the integrated drive conversion transformer with the same name.

[0045] Such as Figure 4 As shown, the demagnetization reset control circuit unit includes a resistor R2, a resistor R3, a resistor R4, a resistor R5, a MOS transistor Q1, and a MOS transistor Q2;

[0046] The reset...

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PUM

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Abstract

A high-temperature-resistant self-powered wide bandgap power device drive control circuit comprises an enhanced drive current control circuit unit, a demagnetization reset control circuit unit, an integrated drive conversion transformer, a drive shaping control circuit unit, a negative voltage power supply conversion control circuit unit, a negative voltage clamping control circuit unit and a peak suppression control circuit unit. According to the integrated drive conversion transformer, the input side coil, the output side coil and the negative voltage conversion coil are wound on the same framework, and the framework is embedded into the magnetic core of the transformer, so that the functions of driving control and power conversion are integrated on the same transformer, and electrical isolation and level conversion of input signals are realized; meanwhile, a negative turn-off voltage conversion function required by the driving shaping control circuit unit is realized; the invention solves the problem of high-frequency and high-reliability driving control when the wide bandgap power device is applied to a high-temperature and high-power density occasion, and is suitable for realizing a reliable driving function based on the wide bandgap power device.

Description

technical field [0001] The invention relates to the field of power electronics, in particular to a drive control circuit for a high temperature resistant self-powered wide bandgap power device. Background technique [0002] High-power power conversion technology is developing rapidly, but the working environment temperature of this kind of power supply is generally lower than 120°C, which cannot be applied to some high-temperature environments, such as harsh environments such as launch vehicles, multi-electric aircraft, ships, tanks, and oil drilling. The highest working temperature in some geothermal energy development fields is close to 200°C, and some work in the field of geothermal energy development even as high as 300°C or more. In view of the demand for high-power power conversion technology in special fields with extremely high temperature environments, based on the high-voltage, high-temperature, and high-temperature characteristics of SiC wide-bandgap power devices...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F27/26H02M1/088H02M1/32H02M3/335
CPCH01F27/266H02M1/32H02M1/088H02M3/33569Y02B70/10
Inventor 王令岩赵絮李春宇李旭阳徐秀华胡骢杨磊岳长路
Owner BEIJING RES INST OF PRECISE MECHATRONICS CONTROLS
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