Optical phased array based on lithium niobate film material phase shift control and preparation method

Abstract

The invention provides an optical phased array based on lithium niobate film material phase shift control and a preparation method. The optical phased array comprises a silicon substrate, a silicon oxide layer on the silicon substrate, a silicon-based optical waveguide layer located on the silicon oxide layer and comprising a coupling beam splitter and a grating antenna with a gap zone between the two, a silicon oxide cladding filled around the silicon-based optical waveguide layer and in the gap zone, and a lithium niobate phase shifter comprising a lithium niobate film located on the gap zone, a lithium niobate optical waveguide located on the lithium niobate film and connected with the coupling beam splitter and the grating antenna, and modulation electrodes located on the lithium niobate film on the two sides of the lithium niobate optical waveguide. A material with a high electro-optic coefficient and low loss, such as lithium niobate, is adopted to replace a thermal regulation resistor or a carrier injection phase modulation mode used in a traditional optical phased array, and optical phase modulation with low power consumption, high speed and low waveguide loss can be carried out in the optical phased array.

Description

technical field [0001] The invention belongs to the field of design and manufacture of silicon optical devices, and in particular relates to an optical phased array based on phase shift control of lithium niobate thin film materials, a preparation method and application. Background technique [0002] Since the development of silicon photonics technology, many breakthroughs and achievements have been made in optoelectronic devices such as light sources, modulators, waveguides, and detectors. Silicon-based materials have low cost and good ductility, and can be used to manufacture optical devices using mature silicon CMOS technology, which is convenient for integration with other existing components. [0003] Due to the lattice properties of silicon, the linear electro-optic effect of silicon is relatively weak, so that the light modulation in silicon mainly depends on the free carrier dispersion effect. However, due to the intrinsic absorption and nonlinear nature of free-car...

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Problems solved by technology

However, as mentioned above, the thermo-optical phase modulation and carrier injection phase modulation of silicon have the disadvantages of high phase shift power consumption, low speed and high waveguide loss respectively, which will greatly affect the performance of optical phased arrays, and further affect the ranging system

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