Self-resonance driving isolation low-stress type bidirectional Class E2 high-frequency power converter

Abstract

The invention relates to a self-resonance driving isolation low-stress type bidirectional Class E2 high-frequency power converter, belongs to the technical field of switching power supplies, and solves the problems of high voltage stress of a switching tube, large system size and incapability of bidirectional flow of energy of an existing converter. The converter comprises a first Class E resonance unit, an isolation type matching network and a second Class E resonance unit, a second port of the first Class E resonance unit is connected with a first port of the isolation type matching network, and a second port of the isolation type matching network is connected with a first port of the second Class E resonance unit; when energy of the converter flows forward, a first port of the first Class E resonance unit is connected with a power supply, and a second port of the second Class E resonance unit is connected with a load; and when the energy of the converter flows reversely, the first port of the first Class E resonance unit is connected with the load, and the second port of the second Class E resonance unit is connected with the power supply.

Description

technical field [0001] The invention relates to the technical field of switching power supplies, in particular to a self-resonant drive isolation low stress bidirectional Class E 2 High frequency power converter. Background technique [0002] In the field of industrial electronics and consumer electronics, a large number of switching power supplies are required to have the characteristics of high stability, high efficiency, high power density, small size and light weight, so as to ensure that the system can continue to work safely and reliably, and effectively reduce its Size and weight. Thanks to the rapid development of the third-generation wide-bandgap semiconductor technology represented by SiC and GaN, especially the large-scale production and application of GaN switching devices known for their excellent high-frequency characteristics, improving the operating frequency of the system has become an industry The effective method can easily realize the miniaturization an...

AI Technical Summary

Problems solved by technology

However, the capacitive switching loss of the square wave drive is huge under high frequency conditions. To solve this problem, a resonant inductor is usually connected in series on the basis of the square wave drive to form a resonant drive. The inductance is transferred to each other, thereby reducing the driving loss, but its disadvantage is that the resonant input current increases, and the loss on the input resistance of the driving circuit is still relatively large

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