A kind of tray with air bridge structure and epitaxial growth method
An air bridge and tray technology, applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of poor uniformity of homogeneous epitaxial wafers, and the back of the semiconductor substrate is easy to be baked black, etc., to achieve good temperature consistency, Wavelength uniformity is improved and the effect of enlarging the flow space
Active Publication Date: 2022-07-26
JIANGSU INST OF ADVANCED SEMICON CO LTD
View PDF20 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0003] The technical problem solved by the invention is: the uniformity of the homogeneous epitaxial wafer grown on the existing tray is poor, and the back of the epitaxial growth semiconductor substrate is easily baked black.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment
[0023] figure 1 It is a schematic diagram of the tray structure of the present invention; figure 2 for figure 1 A partial enlarged schematic view of the cross-section at the compound step at the marked letter E in , a tray with an air bridge structure, comprising a tray main body 1, and the end face of the tray main body is provided with a groove 2 for placing a substrate 8; the bottom of the groove is provided with a plurality of The main body of the tray is provided with a plurality of grooves, and each groove is provided with a plurality of composite steps 3; the central area of the tray is provided with a through hole 7, which communicates with the injection holes at the bottom of the groove.
[0024] Preferably: the composite step is composed of the first step 4 and the second step 5; the first step is close to the inner wall of the groove, and the first step is used to form an air bridge with the inner wall; wherein the first step is close to the groove The inner wa...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| height | aaaaa | aaaaa |
Login to View More
Abstract
The invention discloses a tray with an air bridge structure and an epitaxial growth method, comprising a tray main body, a plurality of grooves are formed on the end surface of the tray main body, and a plurality of composite steps are distributed in each groove. An air bridge structure is naturally formed between the edge and the inner wall of the groove. Thanks to the enhanced fluid transport of the air bridge structure, the backside of the epitaxial wafer grown in this technical solution does not decompose. The air bridge formed by the first step and the orifice structure at the bottom of the groove further strengthen the reaction fluid. The circulation on the backside of the epitaxial wafer, combined with the deeper second step height, increases the fluid flow space on the backside, making the heat exchange more uniform and the temperature consistency of the substrate better. The tray design is particularly suitable for homoepitaxy, and the wavelength uniformity of the homogenous LED epitaxial wafers grown on it has been significantly improved.
Description
technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to a tray for epitaxial growth, which is suitable for homoepitaxial processes of semiconductor substrates such as GaN single crystal, AlN single crystal and SiC single crystal. Background technique [0002] With the rapid development of third-generation semiconductor materials and devices represented by GaN and SiC, the demand for high-quality epitaxial materials is becoming more and more urgent. For example, in homoepitaxy on a GaN single crystal substrate, the material has ultra-high crystal quality, and the dislocation density of the material is 2~3 orders of magnitude smaller than that of traditional heteroepitaxy. For high-performance GaN devices (such as lasers, Micro -LED, etc.) is extremely important. However, the current graphite trays for homoepitaxial growth are based on hetero-substrates such as sapphire. Using this traditionally designed tray to grow ho...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/12C30B25/20C30B29/36C30B29/40H01J37/32H01L33/00
CPCC30B25/12C30B25/205C30B29/403C30B29/406C30B29/36H01J37/32715H01L33/0075H01L33/0066
Inventor 王国斌刘宗亮
Owner JIANGSU INST OF ADVANCED SEMICON CO LTD