Wafer pretreatment device and wafer defect detection method

Abstract

The invention provides a wafer pretreatment device and a wafer defect detection method. The wafer pretreatment device comprises: a cover body; a supporting table arranged in the cover body; a clamping assembly used for clamping and fixing a wafer and movably connected to the supporting table; an electrical test assembly used for testing the electrical performance of the wafer and arranged on the supporting table; an air blowing assembly used for blowing air to the surface of the wafer and arranged on the supporting table; and a controller connected with the clamping assembly, the electrical test assembly and the air blowing assembly, and used for controlling the working states of the clamping assembly, the electrical test assembly and the air blowing assembly. According to the wafer pretreatment device and the wafer defect detection method provided by the invention, full-automatic wafer surface blow-drying and resistance testing can be realized, multi-person cooperation is not needed any more, the automation degree is high, the whole pretreatment efficiency is effectively improved, the use is convenient, and the labor cost is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a wafer preprocessing device and a wafer defect detection method. Background technique [0002] In the manufacturing process of semiconductor silicon wafers, the quality of single crystal silicon rods determines the quality of silicon wafers. Therefore, it is extremely important to improve the quality of single crystal silicon rods. Many native defects will be generated during the crystal pulling process. The method can be divided into COP (Crystal Originated Particle, crystal primary particle) defect, FPD (Flow pattern defect, flow pattern defect), LSTD (Laser scattering topography defect, laser scattering tomography defect) and DSOD (Direct surface oxide defect, direct surface oxidation defects). The sizes of COP, FPD, LSTD, and DSOD defects decrease sequentially. These defects have serious adverse effects on subsequent semiconductor devices made of silicon wafers. Th...

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Problems solved by technology

[0007] 1) After etching, it is necessary to clean the HF acid remaining on the wafer surface after etching with ultrapure water, and dry it with inert gas. Due to the large size of the wafer (300mm or 450mm), during the drying process One person needs to hold the wafer with a hand or a vacuum pen or tweezers, while another person holds an air gun to dry the surface of the wafer. Drying requires the cooperation of two people to complete. Manual operation is inefficient and the degree of automation is low. Increased personnel costs;

[0008] 2) When testing the resistance of the oxide film removal area on the back of the wafer, one person needs to hold the wafer with a hand or a vacuum suction pen or tweezers, while the other person adjusts the multimeter, holding positive and negative test leads with both hands to remove the oxide film on the back of the wafer The resistance test in the area also requires the assistance of multiple people, the process is cumbersome, the degree of automation is low, and the work efficiency is low;

[0009] 3) Drying and testing resistance need to be completed in two steps, which takes a long time and the pretreatment efficiency is low

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