Wafer preprocessing device and wafer defect detection method

Abstract

The present disclosure provides a wafer preprocessing device and a wafer defect detection method. The wafer preprocessing device includes: a cover body; a support table arranged in the cover body; a clamping assembly for clamping and fixing a wafer , can be movably connected on the support platform; the electrical test assembly for testing the electrical performance of the wafer is arranged on the support platform; the blower assembly for blowing air to the surface of the wafer is arranged on the and a controller, the controller is connected with the clamping assembly, the electrical testing assembly and the blowing assembly, and is used to control the clamping assembly, the electrical testing assembly and the blowing assembly The working state of the component. The wafer preprocessing device and wafer defect detection method provided by the present disclosure can realize fully automatic blow-drying of the wafer surface and testing resistance, no need for multi-person cooperation, high degree of automation, effectively improving the efficiency of the entire pre-processing, and easy to use , reduce labor costs.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a wafer preprocessing device and a wafer defect detection method. Background technique [0002] In the manufacturing process of semiconductor silicon wafers, the quality of single crystal silicon rods determines the quality of silicon wafers. Therefore, it is extremely important to improve the quality of single crystal silicon rods. Many native defects will be generated during the crystal pulling process. The method can be divided into COP (Crystal Originated Particle, crystal primary particle) defect, FPD (Flow pattern defect, flow pattern defect), LSTD (Laser scattering topography defect, laser scattering tomography defect) and DSOD (Direct surface oxide defect, direct surface oxidation defects). The sizes of COP, FPD, LSTD, and DSOD defects decrease sequentially. These defects have serious adverse effects on subsequent semiconductor devices made of silicon wafers. Th...

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Problems solved by technology

[0007] 1) After etching, it is necessary to clean the HF acid remaining on the wafer surface after etching with ultrapure water, and dry it with inert gas. Due to the large size of the wafer (300mm or 450mm), during the drying process One person needs to hold the wafer with a hand or a vacuum pen or tweezers, while another person holds an air gun to dry the surface of the wafer. Drying requires the cooperation of two people to complete. Manual operation is inefficient and the degree of automation is low. Increased personnel costs;

[0008] 2) When testing the resistance of the oxide film removal area on the back of the wafer, one person needs to hold the wafer with a hand or a vacuum suction pen or tweezers, while the other person adjusts the multimeter, holding positive and negative test leads with both hands to remove the oxide film on the back of the wafer The resistance test in the area also requires the assistance of multiple people, the process is cumbersome, the degree of automation is low, and the work efficiency is low;

[0009] 3) Drying and testing resistance need to be completed in two steps, which takes a long time and the pretreatment efficiency is low

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