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Ultraviolet LED epitaxial structure and preparation method and application thereof

An epitaxial structure and ultraviolet technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low luminous efficiency and restricted applications, and achieve the effects of improving luminous efficiency, increasing recombination probability, and improving internal quantum efficiency

Pending Publication Date: 2021-11-30
广州市众拓光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although ultraviolet LEDs have broad application prospects, compared with blue LEDs, their luminous efficiency is low, which restricts their further application.

Method used

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  • Ultraviolet LED epitaxial structure and preparation method and application thereof
  • Ultraviolet LED epitaxial structure and preparation method and application thereof
  • Ultraviolet LED epitaxial structure and preparation method and application thereof

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Experimental program
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preparation example Construction

[0031] The preparation method of the ultraviolet LED epitaxial structure is:

[0032] Step 1: Prepare a substrate, and grow a buffer layer on the substrate; the growth temperature of the buffer layer is 500-1100° C., and the growth thickness is about 15-50 nm;

[0033] Step 2: growing an unintentionally doped layer on the buffer layer; the growth temperature of the unintentionally doped layer is 1000-1400° C., and the growth thickness is 2.0-4.0 μm;

[0034] Step 3: growing an N-type layer on the unintentionally doped layer; the growth temperature of the N-type layer is between 1000-1400° C., and the growth thickness is 1-4 μm;

[0035] Step 4: growing a quantum well light-emitting layer on the N-type layer; the growth temperature is 900-1100°C;

[0036] Step 5: growing a P-type electron blocking layer on the quantum well light-emitting layer, the growth temperature is 900-1100°C; the growth thickness is 30-80nm;

[0037] Step 6: growing a P-type AlGaN layer on the P-type elec...

Embodiment 1

[0040] An ultraviolet LED epitaxial structure, including a substrate, a buffer layer, an unintentionally doped layer, an N-type layer, a quantum well light-emitting layer, a P-type electron blocking layer, and a P-type AlGaN layer arranged from bottom to top; the quantum well emits light layer is Al with multiple periods x Ga 1- x N / Al y Ga 1-y N superlattice structure, the Al x Ga 1-x N / Al y Ga 1-y N superlattice structure including Al x Ga 1-x N well layer and Al y Ga 1-y N barrier layer;

[0041] The period number n of the superlattice structure is 5: the first periodic structure is Al x1 Ga 1-x1 N / Al y1 Ga 1-y1 N; the second periodic structure is Al x2 Ga 1-x2 N / Al y2 Ga 1-y2 N; the third periodic structure is Al x3 Ga 1-x3 N / Al y3 Ga 1-y3 N; the third periodic structure is Al x3 Ga 1- x3 N / Al y3 Ga 1-y3 N; the fourth periodic structure is Al x4 Ga 1-x4 N / Al y4 Ga 1-y4 N; the fifth periodic structure is Al x5 Ga 1-x5 N / Al y5 Ga 1-y5 N. ...

Embodiment 2

[0051] An ultraviolet LED epitaxial structure, including a substrate, a buffer layer, an unintentionally doped layer, an N-type layer, a quantum well light-emitting layer, a P-type electron blocking layer, and a P-type AlGaN layer arranged from bottom to top; the quantum well emits light layer is Al with multiple periods x Ga 1- x N / Al y Ga 1-y N superlattice structure, the Al x Ga 1-x N / Al y Ga 1-y N superlattice structure including Al x Ga 1-x N well layer and Al y Ga 1-y N barrier layer;

[0052] The period number n of the superlattice structure is 6: the first periodic structure is Al x1 Ga 1-x1 N / Al y1 Ga 1-y1 N; the second periodic structure is Al x2 Ga 1-x2 N / Al y2 Ga 1-y2 N; the third periodic structure is Al x3 Ga 1-x3 N / Al y3 Ga 1-y3 N; the third periodic structure is Al x3 Ga 1- x3 N / Al y3 Ga 1-y3 N; the fourth periodic structure is Al x4 Ga 1-x4 N / Al y4 Ga 1-y4 N; the fifth periodic structure is Al x5 Ga 1-x5 N / Al y5 Ga 1-y5 N; t...

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Abstract

The invention relates to the technical field of LED semiconductors, in particular to an ultraviolet LED epitaxial structure and a preparation method and application thereof. The ultraviolet LED epitaxial structure comprises a substrate, a buffer layer, an unintentional doping layer, an N-type layer, a quantum well light-emitting layer, a P-type electron blocking layer and a P-type AlGaN layer which are arranged from bottom to top. The quantum well light-emitting layer is of a multi-cycle AlxGa<1-x>N / AlyGa<1-y>N superlattice structure; and the y value of the AlxGa<1-x>N / AlyGa<1-y>N superlattice structure is changed according to the parity change of the cycle number. According to the ultraviolet LED epitaxial structure provided by the invention, the quantum well light-emitting layer adopts a novel quantum barrier, so that the migration efficiency of electrons is effectively reduced, the internal quantum efficiency is remarkably improved, and the light-emitting efficiency is greatly improved.

Description

technical field [0001] The invention relates to the technical field of LED semiconductors, in particular to an ultraviolet LED epitaxial structure and a preparation method and application thereof. Background technique [0002] A light-emitting diode (LED, Light Emitting Diode) is a semiconductor solid-state light-emitting device, which uses a semiconductor PN junction as a light-emitting material, and can directly convert electricity into light. With the continuous development of LED technology, its luminous wavelength has been extended from the visible light band to the ultraviolet band. The wavelength of the ultraviolet band is 100-400nm. 315nm, UVB is 315~280nm, UVC is 280~100nm. Among them, UVA is mainly used for ultraviolet curing and UV inkjet printing, which can be applied to ultraviolet curing and UV inkjet printing, UVB is mainly for medical treatment, and UVC is for sterilization and disinfection. [0003] As a new type of ultraviolet light source, ultraviolet LE...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/32H01L33/00
CPCH01L33/06H01L33/32H01L33/0075Y02P70/50
Inventor 李国强
Owner 广州市众拓光电科技有限公司
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