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Multi-layer epitaxial process and linear platform equipment thereof

An epitaxial process and linear platform technology, applied in the direction of polycrystalline material growth, from chemically reactive gases, crystal growth, etc., can solve the problems of multiple doping control difficulties, poor automatic doping control, etc., to improve yield, Minimizes the effect of internal defects

Pending Publication Date: 2021-12-03
顾赢速科技合肥有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Poor automatic doping control, multiple doping control is especially difficult on thinner epi layers

Method used

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  • Multi-layer epitaxial process and linear platform equipment thereof
  • Multi-layer epitaxial process and linear platform equipment thereof
  • Multi-layer epitaxial process and linear platform equipment thereof

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Embodiment Construction

[0031] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Apparently, the described embodiments are only some of the embodiments of the present invention, but not all of them. The components of the embodiments of the invention generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations. Accordingly, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making creative efforts belong to the protection scope of the present invention.

[0032] The present invention will ...

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Abstract

The invention provides multi-layer epitaxial process linear platform equipment. The equipment comprises a robot vacuum lock capable of horizontally or vertically moving; a plurality of reaction cavities are arranged on the two sides of the robot vacuum lock; and each reaction cavity is provided with a heater, and the robot vacuum lock can put in or take out wafers from the reaction cavities. The equipment improves the productivity flux, is suitable for doping, deposition and other process steps on multiple levels, and can well control the process quality.

Description

technical field [0001] The invention relates to the field of semiconductor technology and equipment, especially the multilayer epitaxy technology and its linear platform equipment. Background technique [0002] Conceptually, the reaction chambers for silicon and silicon carbide are identical, the difference being the growth temperature and the added gas as a source of carbon. [0003] From the history of silicon epitaxy process, there are three main types of equipment: the early reaction device using radio frequency heating, the reaction device using infrared lamp heating, and the leaf-type high-speed rotating reaction device using resistance heating that appeared in recent years. Regardless of the reaction device, its basic structure includes: a quartz chamber with gas inlet and outlet, a wafer tray, and a heating device. [0004] A specific existing silicon epitaxial reaction device, as disclosed in Japanese Patent Publication No. Sho 63-222427, adopts the idea of ​​singl...

Claims

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Application Information

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IPC IPC(8): H01L21/67H01L21/677H01L21/02C30B25/08C30B29/36C30B25/20C30B25/02
CPCH01L21/67103H01L21/67742H01L21/67173H01L21/67196H01L21/02381H01L21/02532H01L21/0262C30B25/08C30B29/36C30B25/186C30B25/20C30B25/025
Inventor 三重野文健
Owner 顾赢速科技合肥有限公司
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