Substrate drying chamber

Abstract

The invention provides a substrate drying chamber. The substrate drying chamber comprises an upper shell; a lower shell; a heater embedded in at least one of the upper shell and the lower shell; a substrate placement plate on which the substrate on which the organic solvent remains is placed; an upper supply port formed in a central region of the upper case to face the substrate placement plate, and providing a supply path of the supercritical fluid for drying; and an integrated supply and discharge port formed to extend from a side surface of the lower case to a central region of the lower case and face the substrate placement plate in the central region of the lower case, and providing a supply path for an initially pressurized supercritical fluid and a discharge path for a mixed fluid, in the mixed fluid, after the supercritical fluid for drying supplied through the upper supply port is dried, the organic solvent is dissolved in the supercritical fluid for drying. According to the present invention, the pattern formed on the substrate can be prevented from collapsing and the supercritical drying efficiency can be improved.

Description

technical field [0001] The present invention relates to a substrate drying chamber, and more particularly, to a substrate drying chamber in which, when supercritical fluid is supplied into the chamber, by using at least one of the upper casing and the lower casing The heater in the chamber adjusts the temperature inside the chamber to the critical point of the supercritical fluid or higher, thereby preventing the pattern formed on the substrate from collapsing and improving supercritical drying efficiency (the pattern collapsing occurs during the drying process, In which the organic solvent which wets the pattern formed on the substrate is dissolved in the supercritical fluid and discharged to the outside), and by guiding the supercritical fluid to flow symmetrically and by supplying and discharging the supercritical fluid to be uniformly dispersed in the chamber, improved The efficiency of drying the substrates and preventing the introduction of particles onto the substrates ...

AI Technical Summary

Problems solved by technology

Therefore, there is a problem that the overall structure of the device becomes complicated

[0013] Furthermore, according to related art including Korean Patent Application Publication No. 10-2017-0137243, since the lower supply port 422 for supplying the supercritical fluid for initial pressurization and the discharge port 426 for discharging the supercritical fluid after drying are not Located in the middle of the lower body 420, so when the supercritical fluid is supplied and discharged, the supercritical fluid flows asymmetrically, and thus it is difficult for the supercritical fluid to be supplied and discharged to be uniformly dispersed in the chamber

Therefore, there arises a problem that drying efficiency decreases

[0014] Furthermore, according to related technologies including Korean Patent Application Publication No. 10-2017-0137243, in the process of supplying supercritical fluid for drying, when the temperature inside the chamber becomes lower than the critical point for maintaining the supercritical state , there is a problem that the pattern formed on the substrate collapses during the drying process in which the organic solvent that wets the pattern formed on the substrate is dissolved in the supercritical fluid and discharged to the outside, and the supercritical drying efficiency decreases

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