Soi wafer with high heat dissipation performance and preparation method thereof

Abstract

The invention provides an SOI wafer with high heat dissipation performance and a preparation method thereof. The SOI wafer sequentially comprises: a bulk silicon wafer, a buried oxide layer, and a silicon device layer; A groove with a preset depth is filled with a material with high thermal conductivity, the material with high thermal conductivity is fixed with heat dissipation glue, and the material with high thermal conductivity is carbon nanotube or molybdenum disulfide. By setting grooves in the bulk silicon wafer and filling the grooves with high thermal conductivity materials such as carbon nanotubes or molybdenum disulfide, based on the high thermal conductivity of carbon nanotubes and molybdenum disulfide, it can effectively improve The heat dissipation performance of the SOI circuit makes the size of the SOI wafer larger; in addition, the high thermal conductivity material is set in the bulk silicon wafer, which does not affect the area of ​​the silicon device layer, improves the utilization of the active area, reduces the cost, and improves the integration. Spend.

Description

technical field [0001] The invention relates to the technical field of semiconductor-on-insulator substrates, in particular to an SOI wafer with high heat dissipation performance and a preparation method thereof. Background technique [0002] Due to the advantages of low parasitic junction capacitance and Buried Oxid (BOX) isolation, Silicon-on-Insulator (SOI) technology is widely used in low-power, high-speed and high-reliability integrated circuits. However, due to the relatively low thermal conductivity of the buried oxide layer, there is a self-heating effect in the high-density integrated SOI circuit, resulting in a decrease in the channel current of the device and the formation of negative differential resistance, which greatly limits the application of semiconductor-on-insulator technology. limit. [0003] Therefore, it is necessary to propose an SOI wafer with high heat dissipation performance and a preparation method thereof, so as to effectively improve the heat d...

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Problems solved by technology

However, due to the relatively low thermal conductivity of the buried oxide layer, there is a self-heating effect in the high-density integrated SOI circuit, resulting in a decrease in the channel current of the device and the formation of negative differential resistance, which greatly limits the application of semiconductor-on-insulator technology. limit

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