35results about How to "Does not affect the area" patented technology

The invention discloses a precision seeding working system and method based on an unmanned aerial vehicle platform. The system comprises an unmanned aerial vehicle (1) and seeding devices (2) fixed on the unmanned aerial vehicle. Each seeding device (2) comprises a seed box (15), a fixed seat (16), a wind power seed scattering device, a quantitative seeding roller (18), roller blades (19) and a servo motor (22); the servo motor is driven by a battery; the wind power seed scattering device is a fan (17) only or an air supply channel consisting of a fan and a sleeve; the seed box (15) is fixed on the top of the fixed seat (16); the servo motor (22) is mounted on the fixed seat; the quantitative seeding rollers (18) controlled by the servo motor realize precision seeding; by the adoption of the wind power seed scattering device, seeding is uniform. The precision seeding working system based on the unmanned aerial vehicle platform can realize precision seeding work and is high in seeding efficiency and easy to implement.

The invention discloses a piece type heat exchange silencer which satisfies a plurality of technical indexes such as a noise eliminating coefficient, the heat exchange efficiency, regenerative noise, resistance loss and the like. According to the piece type heat exchange silencer, space wasting is reduced on the condition that all indexes are satisfied; the noise eliminating coefficient is maintained, the regenerative noise, and the flow resistance are increased due to the fact that a heat exchange pipe bundle is arranged inside noise eliminating materials; purposes of waste heat recovery or air conditioning treatment are achieved and extra space is not occupied during the heat exchange process; heat dissipation loss is reduced due to the fact that peripheral noise eliminating materials are made of thermal insulation type materials; the heat exchange effect is increased due to the fact that the middle noise eliminating materials are made of ordinary noise eliminating materials.

The invention discloses a production method of a tunneling field-effect transistor and belongs to the field of CMOS (complementary metal-oxide-semiconductor transistor) ULSI (ultra-large scale integrated circuits) and their field-effect transistor logic devices. According to the production method, a p-type silicon wafer of relative high impedance is used as a trench region and a body region of a TFET (tunneling field-effect transistor) device, a mask for injection of an N<-> region is added on basis of the standard CMOS-IC process, the N<-> region injected deep in a trench, device isolation is achieved for the TFET in circuit application, and device performances and device area are unaffected.

The invention relates to an integrated passive capacitance fan-out wafer-level packaging structure and a manufacturing method, including a plastic package and a chip; the feature is that a first metal post, a second metal post, a third The first metal post and the second metal post are located on one side of the chip, and the third metal post and the fourth metal post are located on the other side of the chip; The first metal layer, the second metal layer, the third metal layer and the fourth metal layer are arranged in the layer, the first metal layer is connected with the first metal column, the second metal layer is connected with the second metal column and the first electrode, and the second metal layer is connected with the first metal column and the first electrode. The third metal layer is connected to the third metal column and the second electrode, and the fourth metal layer is connected to the fourth metal column; the metal layer under the bump is respectively arranged on the four metal layers, and the solder is respectively arranged on the outer surface of the metal layer under the point. ball. The invention realizes the integration of fan-out chip packaging and thin-film integrated passive passive devices, and improves the electrical quality.

The invention relates to an integrated passive device fan-out-type wafer-level packaging structure and a manufacturing method of the integrated passive device fan-out-type wafer-level packaging structure. The integrated passive device fan-out-type wafer-level packaging structure comprises a modeling plastic body and a chip, and is characterized in that a spiral metal wire distribution layer is arranged in the modeling plastic body, an insulating layer is arranged on the front surface of the modeling plastic body, a metal wire leading layer is distributed in the insulating layer and is connected with an electrode of the chip and the metal wire distribution layer, and a welding ball is arranged on the metal wire leading layer. The manufacturing method of the packaging structure comprises the following steps that (1) the chip is packaged in the modeling plastic body in a plastic mode; (2) a spiral groove body is formed in the front surface of the modeling plastic body, and the metal wire distribution layer is manufactured in the groove body; (3) the insulating layer is manufactured on the front surface of the modeling plastic body, a window is formed in the insulating layer, a metal layer is manufactured on the surface of the insulating layer, a needed graph is etched on the metal layer, and the metal wire leading layer is obtained; (4) an insulating layer is manufactured on the metal wire leading layer, a window is formed in the insulating layer, and the welding ball is manufactured in the window. By means of the integrated passive device fan-out-type wafer-level packaging structure and the manufacturing method of the integrated passive device fan-out-type wafer-level packaging structure, the electric connection length of the chip and a passive device is shortened, and the electric quality is improved.

The invention discloses an embedded touch display screen and a touch display device. The embedded touch display screen comprises a display panel and a touch electrode, wherein the display panel comprises a display region and a frame region; the touch electrode covers the display region and extends to the frame region. Known from the above contents, according to the technical scheme provided by the invention, the size of the touch electrode is enlarged; except for the to-be-covered display region, the coverage region of the touch electrode extends to the frame region; by virtue of enlarging the size of the touch electrode, the touch sensitivity of edge parts of the display region is improved on the premise of not influencing the area of the display region.

The invention provides a varactor structure used in a flash memory circuit and a manufacture method thereof. The varactor structure comprises a substrate, a first insulating layer formed on the substrate, a floating gate formed on the first insulating layer, a control gate arranged opposite to the floating gate, and a second insulating layer formed between the floating gate and the control gate. A source and a drain are formed on the substrate. A first connection wire separately led out from the floating gate and is used as a polar plate of the capacitor of the varactor. The source lead out wire, the drain lead out wire and the lead out wire of the control gate are electrically connected together to form a second connection wire, and the second connection wire is used as the other polar plate of the capacitor of the varactor. The first insulating layer and the second insulating layer are used as the dielectric layer of the capacitor of the varactor. The varactor used in the flash memory circuit can meet the demand of a large-capacity capacitor, and can take the trend of chip miniaturization into account.