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35results about How to "Does not affect the area" patented technology

Foldable display device

The embodiment of the invention discloses a foldable display device. The foldable display device comprises a flexible display module and a supporting main body, the supporting main body of the bendingarea is flexible, a first bending notch is formed in one side, deviating from the flexible display module, of the supporting main body, a plurality of sawtooth-shaped second bending notches are further formed in the side, deviating from the flexible display module, of the first bending notch, one second bending notch extends along the folding line, and the thickness of the supporting main body atthe position of the second bending notch is gradually reduced in the direction parallel to the surface of the flexible display module and towards the folding line along the edge of the foldable display device. According to the embodiment of the invention, the problem that a film layer is easy to misplace and separate during bending due to the fact that an existing bendable display device cannot effectively control the position of the bending stress line can be solved, the bending stress line can be effectively controlled to coincide with the preset folding line, it is ensured that the supporting main body of the bending area is bent according to a preset mode, and misplacement and separation of the film layer are avoided.
Owner:HUBEI YANGTZE IND INNOVAION CENT OF ADVANCED DISPLAY CO LTD

SOI wafer with high heat dissipation performance and preparation method of SOI wafer

The invention provides an SOI wafer with high heat dissipation performance and a preparation method of the SOI wafer. The SOI wafer sequentially comprises a bulk silicon wafer, a buried oxide layer and a silicon device layer, a groove with a preset depth is formed in one side, close to the buried oxide layer, of the bulk silicon wafer, the groove is filled with a high-thermal-conductivity material, the high-thermal-conductivity material is fixed by adopting heat dissipation glue, and the high-thermal-conductivity material is a carbon nano tube or molybdenum disulfide. According to the invention, the grooves are formed in the bulk silicon wafer, and the grooves are filled with the high-thermal-conductivity material made of the carbon nanotubes or the molybdenum disulfide, so that the heat dissipation performance of an SOI circuit can be effectively improved based on the high thermal conductivity of the carbon nanotubes and the molybdenum disulfide, and the size of the SOI wafer is made to be larger; in addition, the high-thermal-conductivity material is arranged in the bulk silicon wafer, the area of the silicon device layer is not affected, the utilization rate of the active region is improved, the cost is reduced, and the integration level is improved.
Owner:MICROTERA SEMICON (GUANGZHOU) CO LTD

Flexible comb protective sleeve and platy comb comprising same

The invention discloses a flexible comb protective sleeve and a platy comb comprising the same. The flexible comb protective sleeve comprises a protective sleeve body, wherein the protective sleeve body is formed by cutting a flexible material, and the protective sleeve body can be fixedly arranged and coated on a comb body of a corresponding comb; multiple comb teeth which are arranged at intervals are arranged on the side surface of the comb body of the platy comb in a stretching way, the comb body of the platy comb is fixedly provided with the protective sleeve body which is formed by cutting the flexible material, and the comb body of the platy comb which is made of natural materials such as bamboo, wood and horn bones can be covered by the protective sleeve body. According to the flexible comb protective sleeve disclosed by the invention, the area that the surface of the comb body is directly in contact with natural air can be effectively reduced on the premise that a normal combing function of the comb is not affected, the easy-to-deform comb body on the platy comb which is made of the bamboo, the wood or the horn bones is enabled to adapt to the change of the natural air, bending deformation of the comb due to damping can be effectively delayed, the platy comb can be prevented from being broken to a certain degree, the service life of the platy comb is effectively prolonged, the cost is low, and the practicability is high.
Owner:刘燕西

Integrated passive capacitor fan-out wafer-level packaging structure and manufacturing method

The invention relates to an integrated passive capacitance fan-out wafer-level packaging structure and a manufacturing method, including a plastic package and a chip; the feature is that a first metal post, a second metal post, a third The first metal post and the second metal post are located on one side of the chip, and the third metal post and the fourth metal post are located on the other side of the chip; The first metal layer, the second metal layer, the third metal layer and the fourth metal layer are arranged in the layer, the first metal layer is connected with the first metal column, the second metal layer is connected with the second metal column and the first electrode, and the second metal layer is connected with the first metal column and the first electrode. The third metal layer is connected to the third metal column and the second electrode, and the fourth metal layer is connected to the fourth metal column; the metal layer under the bump is respectively arranged on the four metal layers, and the solder is respectively arranged on the outer surface of the metal layer under the point. ball. The invention realizes the integration of fan-out chip packaging and thin-film integrated passive passive devices, and improves the electrical quality.
Owner:NAT CENT FOR ADVANCED PACKAGING CO LTD

Integrated passive device fan-out wafer level packaging structure and manufacturing method

The invention relates to an integrated passive device fan-out-type wafer-level packaging structure and a manufacturing method of the integrated passive device fan-out-type wafer-level packaging structure. The integrated passive device fan-out-type wafer-level packaging structure comprises a modeling plastic body and a chip, and is characterized in that a spiral metal wire distribution layer is arranged in the modeling plastic body, an insulating layer is arranged on the front surface of the modeling plastic body, a metal wire leading layer is distributed in the insulating layer and is connected with an electrode of the chip and the metal wire distribution layer, and a welding ball is arranged on the metal wire leading layer. The manufacturing method of the packaging structure comprises the following steps that (1) the chip is packaged in the modeling plastic body in a plastic mode; (2) a spiral groove body is formed in the front surface of the modeling plastic body, and the metal wire distribution layer is manufactured in the groove body; (3) the insulating layer is manufactured on the front surface of the modeling plastic body, a window is formed in the insulating layer, a metal layer is manufactured on the surface of the insulating layer, a needed graph is etched on the metal layer, and the metal wire leading layer is obtained; (4) an insulating layer is manufactured on the metal wire leading layer, a window is formed in the insulating layer, and the welding ball is manufactured in the window. By means of the integrated passive device fan-out-type wafer-level packaging structure and the manufacturing method of the integrated passive device fan-out-type wafer-level packaging structure, the electric connection length of the chip and a passive device is shortened, and the electric quality is improved.
Owner:江苏中科智芯集成科技有限公司

Embedded capacitor structure and manufacturing method thereof

The invention discloses an embedded capacitor structure and a manufacturing method thereof, the capacitor structure comprises a substrate with a trench with a certain depth, the bottom of the trench is sequentially provided with multiple layers of electrode structures which are arranged at intervals along the depth direction of the trench, and each electrode structure comprises an electrode layer, and a bonding layer and a first dielectric layer which are arranged around the electrode layer; the first dielectric layer and the bonding layer sequentially wrap the side wall of each electrode layer, the electrode structures are attached to the side wall of the trench through the bonding layers, each bonding layer further wraps the bottom faces of the electrode layer and the first dielectric layer, and a second dielectric layer is arranged between every two adjacent spaced electrode structures. And two adjacent and spaced electrode structures and the second dielectric layer between the two adjacent and spaced electrode structures form a group of capacitor structures. The DRIE and depth end point detection technology is adopted to form the trench with the vertical side wall, the thickness, the area and the shape of the capacitor structure can be adjusted according to requirements, variable control over the capacitance value is achieved, and finally the purpose of optimizing the efficiency is achieved.
Owner:泉州市三安集成电路有限公司
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