Production method of tunneling field-effect transistor

Abstract

The invention discloses a production method of a tunneling field-effect transistor and belongs to the field of CMOS (complementary metal-oxide-semiconductor transistor) ULSI (ultra-large scale integrated circuits) and their field-effect transistor logic devices. According to the production method, a p-type silicon wafer of relative high impedance is used as a trench region and a body region of a TFET (tunneling field-effect transistor) device, a mask for injection of an N<-> region is added on basis of the standard CMOS-IC process, the N<-> region injected deep in a trench, device isolation is achieved for the TFET in circuit application, and device performances and device area are unaffected.

Description

technical field [0001] The invention belongs to the field of field effect transistor logic devices and circuits in a CMOS ultra large integrated circuit (ULSI), and in particular relates to a method for isolating a tunneling field effect transistor (TFET). Background technique [0002] As the size of the MOSFET enters the nanometer scale, the negative effects such as the short channel effect of the device become more and more serious, and the off-state leakage current of the device continues to increase. At the same time, because the sub-threshold slope of the traditional MOSFET is limited by the thermoelectric potential and cannot be reduced synchronously with the reduction of the device size, there is a theoretical limit of 60mV / dec, which makes the leakage current further increase with the reduction of the power supply voltage, thus increased device power consumption. The power consumption problem has become one of the most severe problems limiting the scaling of devices...

AI Technical Summary

Problems solved by technology

When TFET devices form a complex circuit, NTFET and PTFET share the same substrate, because the substrate resistance is usually not high enough, resulting in the P of different TFET devices + regions can be connected to each other through the substrate, while the P of different TFET devices in circuit applications + There may be differences in the potential of the region, so the lightly doped substrate will cause potential crosstalk, which is a big problem in a circuit composed of TFET devices, and a method for effectively isolating each TFET device is needed

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