Ceramic substrate and ceramic substrate manufacturing method

Abstract

The present invention relates to a ceramic substrate manufacturing method comprising the steps of: forming a mask on one side of a metal layer; etching the metal layer exposed by means of the mask to form inclined protrusions; and bonding the metal layer having the inclined protrusions formed thereon to a ceramic base material. Accordingly, by forming the inclined protrusions on the outer surface of the metal layer bonded to the ceramic base material, the present invention enhances bonding strength between the ceramic base material and the metal layer and facilitates the etching process of the metal layer.

Description

technical field [0001] The present invention relates to a ceramic substrate and a method for manufacturing the ceramic substrate, and in more detail, relates to a ceramic substrate and a method for manufacturing the ceramic substrate that can firmly maintain the bonding state between the ceramic substrate and the metal film even when the temperature changes rapidly. Background technique [0002] The ceramic substrate is constituted by integrally attaching metal foil such as copper foil to a ceramic base. Ceramic substrates are produced by AMB (Active Metal Brazing), DBC (Direct Bond Copper) and other manufacturing processes, and can also be divided into ceramic AMB substrates, ceramic DBC substrates, etc. according to differences in manufacturing processes. [0003] The ceramic AMB substrate is manufactured by an AMB method in which metal is directly brazed to the surface of the ceramic substrate without metallization (or metal wiring) on ​​the surface of the ceramic substra...

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Problems solved by technology

[0013] However, since the dimple-type ceramic AMB substrate is formed with a plurality of dimples 22, the area of ​​the metal layer 20 is reduced, and there is a problem that electrical properties such as electrical conductivity and thermal resistance are reduced.

In other words, the electrical characteristics of the ceramic AMB substrate are proportional to the area of ​​the metal layer 20, but the dimple type ceramic AMB substrate is formed with a plurality of dimples 22 in the metal layer 20, thereby reducing the area of ​​the metal layer 20, thereby Reduced electrical characteristics

[0014] In addition, if image 3 As shown, the dimple-type ceramic AMB substrate has the following problem. In order to prevent the reduction of electrical characteristics, when the dimple 22 is formed only in a part of the metal layer 20, when the temperature changes rapidly in the area where the dimple 22 is not formed, the A crack occurs in the metal layer 20 or the metal layer 20 is separated from the ceramic substrate 10

[0015] In addition, the dimple-type ceramic AMB substrate has the following problems. The area occupancy of the dimple 22 increases, the resistance becomes high, and the strength and bonding strength between the ceramic substrate 10 and the metal layer 20 decrease, so that the electrical characteristics required for the application cannot be satisfied.

[0016] In addition, the dimple-type ceramic AMB substrate has the problem that it cannot be applied to fine patterns because the area occupancy of the dimples 22 increases.

[0017] In addition, according to the specifications, when the thickness of the metal layer 20 is greater than a certain thickness, it is difficult to carry out the etching and dimple forming processes, and there is also the possibility of excessive time consumption and damage to the substrate.

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