Semiconductor device, integrated circuit product, and manufacturing method

Abstract

The invention provides a semiconductor device, an integrated circuit product and a manufacturing method, belonging to the technical field of semiconductor devices. The semiconductor device includes: a base body; a first doped region formed in the base body, the first doped region being the doped region of the source region and the drain region of the first MOS; a second doped region formed in the In the base body, the distance between the second doped region and the source region is smaller than the distance between the second doped region and the drain region, and the conductivity type of the second doped region is opposite to that of the source region ; an interconnection layer having conductivity and in contact with the second doped region and the source region. The invention can provide anti-electromagnetic interference capability for semiconductor devices.

Description

technical field [0001] The present invention relates to the technical field of semiconductor devices, in particular to a semiconductor device, a manufacturing method of a semiconductor device, an inverter, a layout structure, an electronic device, an integrated circuit product and a computer Read storage media. Background technique [0002] With the continuous reduction of the feature size of integrated circuits and corresponding various semiconductor devices, the electromagnetic damage effect is easy to appear in the reduced devices, which often leads to actual damage to the device after the effect occurs. [0003] At present, some studies have been carried out in the industry on the damage effect of PN junction (p–n junction) and bipolar transistor (bipolar junction transistor, BJT). Research on MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, denoted as MOSFET, referred to as MOS) device damage is a research on electrostatic damage (Electrostatic discharge, ESD...

AI Technical Summary

Problems solved by technology

Research on MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, denoted as MOSFET, referred to as MOS) device damage is a research on electrostatic damage (Electrostatic discharge, ESD), but research on electromagnetic damage to MOS devices has not yet been obtained. Satisfactory progress, especially for CMOS (Complementary metal–oxide–semiconductor, CMOS) devices, such as electromagnetic damage of CMOS inverters

In the actual use environment, semiconductor devices are easily exposed to electromagnetic interference. Under electromagnetic interference, some semiconductor devices will be damaged and malfunction, which will further lead to systematic failure of integrated circuits or other equipment.

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