Process for drawing low-light-attenuation single crystal, single crystal, silicon rod, silicon wafer, battery and assembly

Abstract

The invention provides a process for drawing a low-light-attenuation single crystal, which comprises the steps of loading a polycrystalline silicon raw material and a doping agent into a crucible during loading, and carrying out straight pulling on the single crystal; and adopting a high crystal transition process in the stage from temperature stabilization to equal diameter, wherein the crystal transition of the high crystal transition process is greater than 10 rpm; and drawing a plurality of short-section single crystals. The method has the beneficial effects that single crystal drawing is performed by adopting a czochralski method, in the single crystal drawing process, a dopant is added in the initial and re-feeding of drawing and when a coil base is abnormal, meanwhile, single crystal drawing is performed by adopting a high crystal transition process in the stage from temperature stabilization to equal diameter, and an automatic shoulder transition process and a multi-short-section single crystal drawing process are adopted, so that RRV defects of the single crystal is reduced, and the single crystal attenuation rate is reduced.

Description

technical field [0001] The invention belongs to the technical field of single crystals, and in particular relates to a process for pulling single crystals with low light attenuation, single crystals, silicon rods, silicon wafers, batteries and components. Background technique [0002] Large-diameter silicon wafers will become the key development direction in the field of monocrystalline silicon in the future due to their better competitive advantages in terms of cost and battery module power, but P-type large-diameter ( Round bar) monocrystalline cells also have conversion efficiency attenuation during use. At present, it is generally believed in the industry that the cause of conversion efficiency attenuation is the current use of B-Si alloys in the single crystal pulling process or in the post-processing process of silicon wafers. , resulting in a B-0 complex, resulting in accelerated single-crystal conversion efficiency attenuation. Contents of the invention [0003] ...

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Problems solved by technology

[0002] Large-diameter silicon wafers will become the key development direction in the field of monocrystalline silicon in the future due to their better competitive advantages in terms of cost and battery module power, but P-type large-diameter ( Round bar) monocrystalline cells also have conversion efficiency attenuation during use. At present, it is generally believed in the industry that the cause of conversion efficiency attenuation is the current use of B-Si alloys in the single crystal pulling process or in the post-processing process of silicon wafers. , resulting in a B-0 complex, resulting in accelerated single crystal conversion efficiency attenuation

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