Method for manufacturing high-brightness low-attenuation LEDs

A technology of light-emitting diodes and manufacturing methods, which is applied to electrical components, circuits, semiconductor devices, etc., can solve problems such as inappropriate selection of baking temperature and time, low brightness of light-emitting diodes, and improper color matching, so as to improve light extraction efficiency, Improve the service life and brightness, low attenuation effect

Inactive Publication Date: 2012-10-03
杨勇
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Problems solved by technology

However, there are some deficiencies in the manufacturing process of traditional light-emitting diodes, such as poor powder mixing selectivity, improper selection of baking temperature and time, and improper color matching, which lead to the disadvantages of low brightness, fast decay, and poor reliability of the light-emitting diodes produced. Especially the light decay of white light is the most serious, the brightness is not enough when lighting, and the service life is short

Method used

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Embodiment Construction

[0029] A method for manufacturing a high-brightness and low-attenuation LED light-emitting diode, the method comprising the following steps:

[0030] ①. First, take the silicon carbide substrate, place the silicon carbide substrate in a metal-organic chemical vapor deposition wafer furnace, and fabricate gallium nitride LED crystal epitaxial wafers on the silicon carbide substrate.

[0031] The metal-organic chemical vapor deposition wafer furnace uses gas phase reactants, organic metals of group III and NH3 of group V to react on the surface of the silicon carbide substrate, and deposits gallium nitride on the surface of the silicon carbide substrate. By controlling the temperature , pressure, reactant concentration and ratio, so as to control its composition and crystal phase quality, and then produce GaN LED crystal epitaxial wafers with good integrity, high conductivity and good thermal conductivity.

[0032] ②. After the fabrication of the GaN LED crystal epitaxial wafer ...

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Abstract

The invention discloses a method for manufacturing high-brightness low-attenuation LEDs. The method comprises the following steps: (1) taking a silicon carbide substrate and manufacturing a gallium nitride LED crystal epitaxial wafer on the silicon carbide substrate; (2) detecting the surface and the thickness of the gallium nitride LED crystal epitaxial wafer; (3) dividing the gallium nitride LED crystal epitaxial wafer into a plurality of repeated units through a wafer expansion machine; (4) dispensing low-attenuation insulating gel and welding wires; (5) dispensing light decay resistant original gum on the gallium nitride LED crystal epitaxial wafer; (6) pouring a packaging adhesive; (7) detecting light splitting after demoulding; and (8) packaging and warehousing. The manufacturing method provided by the invention is convenient to operate, and is practical; and LEDs manufactured by adopting the method are high in light efficiency, light output brightness and reliability, long in service life and low in attenuation.

Description

technical field [0001] The invention relates to the technical field of electronic components, in particular to a method for manufacturing a high-brightness and low-attenuation LED light-emitting diode. Background technique [0002] The light-emitting diode crystal is made of p-n structure, has unidirectional conductivity, and directly converts electrical energy into light energy. Light-emitting diodes are divided into red light, blue light and white light according to the color of the tube body. As a new type of light source, light-emitting diodes have been used by Guangfa in display backlight modules, Markets such as communications, computers and lighting. [0003] Traditional light-emitting diodes use sapphire as a substrate. Since sapphire is a transparent material, the light-emitting diode emits scattered light, which cannot be used intensively and causes loss. At the same time, the scattered light will be absorbed by various internal semiconductor layers and store he...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/02H01L33/56
Inventor 杨勇
Owner 杨勇
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