Detection control system for laser de-bonding

Abstract

The invention provides a detection control system for laser de-bonding. In a laser de-bonding process, a suction cup is adsorbed on the surface of a substrate, a laser beam sequentially penetrates through the suction cup and the substrate and then is focused on a bonding layer, and after the focus of the laser beam is controlled to be behind a unit area of a scanning part of the bonding layer, a lifting assembly pulls a suction cup upwards, so that the substrate and the wafer are separated at the position of the unit area, the stripping mode that laser de-bonding and suction cup pulling are carried out at the same time is adopted, the substrate and the wafer are prevented from being adhered again due to the fact that a bonding material in a molten state is cooled and solidified again, and therefore the stripping difficulty is reduced. And a semi-reflecting and semi-transmitting mirror, a detection light source, a beam splitting prism, a light spot detection assembly and an upper computer are arranged, so that laser spot position information and bonding layer heated condition information of a local area can be observed in real time, the upper computer can control a galvanometer system to adjust a scanning track and scanning time of a laser beam, and the laser de-bonding efficiency and effect are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a detection and control system for laser debonding. Background technique [0002] In the manufacturing process of the chip, a large number of microelectronic devices are usually processed on the wafer by means of etching, deposition, polishing, etc. A wafer is a thin slice cut from a single crystal silicon ingot, and its thickness is usually between 0.3mm and 0.9mm, which shows that the thickness is very thin. Since the thickness of the wafer is relatively thin, and when various circuits are processed on the wafer, multiple times of etching, polishing, cleaning, etc. are required. Usually, the wafer is temporarily bonded to the substrate before processing. Afterwards, processes such as deposition and etching are carried out on the surface of the wafer to manufacture various microelectronic devices on the surface of the wafer. After the wafer processing is co...

AI Technical Summary

Problems solved by technology

However, after the laser stops heating, the process of using the chuck to absorb the wafer requires operations such as movement and adsorption, which will take a long time, and since the laser has stopped heating, there is inevitably a temperature gap between the wafer and the substrate. The drop phenomenon makes the bonding material in the molten state easy to cool and solidify again, so that the wafer and the substrate stick together again, increasing the difficulty of peeling

And the existing technology only controls the vibrating mirror system to make the focus of the laser beam scan the entire bonding layer, and only moves according to the initially set scanning trajectory. After the movement is completed, the suction cup is used to absorb the substrate for separation.

Since the spot position of the laser scanning the bonding layer and the degree of heating of the bonding layer cannot be observed during this process, it is impossible to understand the growth of the laser burst point and the energy information of the laser beam, resulting in laser debonding less effective

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