Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method for improving out-of-band suppression of bulk acoustic wave filter and filter structure

A bulk acoustic wave filter and lifting band technology, which is applied in the field of filters, can solve problems affecting the application of single crystal thin film surface acoustic wave filters, etc., and achieve the effects of reducing baseband noise, improving out-of-band rejection, and eliminating the influence of echoes

Active Publication Date: 2022-03-01
深圳新声半导体有限公司
View PDF12 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the single crystal thin film surface acoustic wave filter has a large signal body wave clutter signal in the high frequency band of the filter peak, which affects the application of the single crystal thin film surface acoustic wave filter.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for improving out-of-band suppression of bulk acoustic wave filter and filter structure
  • A method for improving out-of-band suppression of bulk acoustic wave filter and filter structure
  • A method for improving out-of-band suppression of bulk acoustic wave filter and filter structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0039] The preferred embodiments of the present invention will be described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.

[0040] A method for enhancing out-of-band suppression of a bulk acoustic wave filter according to the present invention, such as figure 1 As shown, the method for enhancing out-of-band suppression includes:

[0041] Step 1, setting a sound velocity buffer layer on the substrate, and setting a piezoelectric layer on the sound velocity buffer layer;

[0042] Step 2, setting M IDTs on the piezoelectric layer, wherein M is an odd number greater than 3; among the M IDTs, the finger bar of each IDT itself The width is the same as the width of the gap between the fingers, and the number of arrays of fingers of each interdigital transducer is singular, and the number of fi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention proposes a method for improving out-of-band suppression of a bulk acoustic wave filter and a filter structure, wherein the method for improving out-of-band suppression includes: step 1, setting a sound velocity buffer layer on the substrate, and placing a sound velocity buffer layer on the sound velocity buffer layer A piezoelectric layer is arranged on the piezoelectric layer; step 2, M interdigital transducers are arranged on the piezoelectric layer, wherein M is an odd number greater than 3; among the M interdigital transducers, each interdigital transducer The width of the fingers of the transducer itself is the same as the width of the gap between the fingers, and the number of arrays of fingers of each interdigital transducer is an odd number, and the number of fingers of each interdigital transducer is M‑2 Step 3, adjust the front and rear positions of the M IDTs, so that the M IDTs are non-linear up and down staggered arrangements, and the angle and position of the M IDTs are adjusted to reduce Echo reflections between two adjacent IDTs.

Description

technical field [0001] The invention provides a method for enhancing out-of-band suppression of a bulk acoustic wave filter and a filter structure, belonging to the technical field of filters. Background technique [0002] Single crystal thin-film surface acoustic wave technology is currently a popular surface acoustic wave technology, such as the I.H.P.SAW (Incredible High-performance SAW) filter of Murata Manufacturing Co., Ltd. Compared with surface wave filters, it has the advantages of high quality (Q) value, low temperature coefficient of frequency (Temperature Coefficient of Frequency, TCF) and high heat dissipation. At present, the single-crystal thin-film SAW filter has body wave clutter signals with larger signals in the high-frequency band of the filter peak, which affects the application of single-crystal thin-film SAW filters. Contents of the invention [0003] The present invention provides a method for enhancing out-of-band suppression of a bulk acoustic wa...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H03H9/02H03H9/145H03H9/58H03H9/56
CPCH03H9/02015H03H9/02062H03H9/02086H03H9/14544H03H9/582H03H9/564
Inventor 王晓龙魏彬
Owner 深圳新声半导体有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com