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Terahertz dual-channel modulator and preparation method thereof

A dual-channel, modulator technology, applied in the field of microwave transmission, can solve the problems of inability to independently modulate communication technologies, and achieve the effects of small size, easy integration, and high modulation depth

Pending Publication Date: 2022-01-11
CHONGQING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is that independent modulation in communication technology cannot be achieved when modulating multiple frequency bands. The purpose is to provide a terahertz dual-channel modulator and a preparation method that can realize independent modulation, high modulation depth

Method used

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  • Terahertz dual-channel modulator and preparation method thereof
  • Terahertz dual-channel modulator and preparation method thereof
  • Terahertz dual-channel modulator and preparation method thereof

Examples

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Embodiment 1

[0046] This embodiment discloses a terahertz dual-channel modulator, such as figure 1 and image 3 As shown, it includes a substrate 3, an epitaxial layer 1 and a modulation array, the epitaxial layer 1 is grown on the substrate 3, and the modulation array is arranged on the epitaxial layer 1;

[0047] The modulation array is composed of M*N array element structures, and the array element structures are arranged in an array, and the first grid feeder 5 and the first Schottky electrode 9 of each row of array element structures connection, the second gate feeder 6 of each row of array element structure is connected to the second Schottky electrode 4, M>2, N>2; the first source-drain feeder 10 of each row of array element structure The second source-drain feeder 11 is connected to the ohmic electrode 2; the modulation array is used to pass terahertz waves of different frequencies; the first Schottky electrode 9 is connected to the second Schottky electrode 4 are respectively co...

Embodiment 2

[0063] This embodiment discloses a method for preparing a terahertz dual-channel modulator, and the steps of the preparation method include:

[0064] S1: cleaning the substrate 3 by means of ultrasonic cleaning, and drying the cleaned substrate 3;

[0065] S2: preparing an AlGaN / GaN heterojunction thin film on the substrate 3 by using an organic compound vapor deposition method to obtain a substrate;

[0066] S3: Spin-coat a 2 μm thick photoresist on the substrate, use a mask to develop photolithography, determine the HEMT active area, and use inductively coupled plasma etching to etch away the AlGaN / GaN thin film, remove the remaining photoresist on the substrate to obtain the HEMT active region substrate;

[0067]Preparation of the HEMT active region. First, spin-coat a photoresist with a thickness of 2 μm on the substrate, and use a mask for photolithography development to determine the active region of the HEMT. Then, the AlGaN / GaN film outside the active region of the...

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Abstract

The invention discloses a terahertz dual-channel modulator and a preparation method thereof. The terahertz dual-channel modulator is characterized in that: an epitaxial layer grows on a substrate, and a modulation array is arranged on the epitaxial layer; the modulation array is composed of M*N array element structures, a first gate feeder line of each row of array element structures is connected with a first Schottky electrode, a second gate feeder line of each row of array element structures is connected with a second Schottky electrode, M is greater than 2, and N is greater than 2; a first source-drain feeder line and a second source-drain feeder line of each row of array element structures are connected with an ohmic electrode; the modulation array is used for terahertz waves with different frequencies to pass through; and the first Schottky electrode and the second Schottky electrode are respectively connected in series with the ohmic electrode through a direct-current power supply. The terahertz dual-channel modulator has the beneficial effects that: the resonant mode of a metamaterial structure is changed, so that the terahertz waves of multiple frequency bands can be regulated and controlled; and independent modulation of multiple frequency points is realized, the modulation depth is high, the size is small, and integration is easy.

Description

technical field [0001] The invention relates to the field of microwave transmission technology, in particular to a terahertz dual-channel modulator and a preparation method. Background technique [0002] Terahertz wave is an electromagnetic wave between microwave and infrared. Its frequency range is 0.1-10THz. Its unique frequency band position makes it exhibit many distinctive electromagnetic characteristics. It can be widely used in biomedicine, security inspection and wireless communication. and other fields. In recent years, terahertz wireless communication technology is developing towards high-speed and long-distance, but its development is limited to a certain extent due to the lack of high-performance key components. The terahertz modulator is one of the key devices, and its performance improvement plays a vital role in the development of terahertz communication technology, so the terahertz modulator has become a research hotspot in recent years. [0003] Since 2004...

Claims

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Application Information

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IPC IPC(8): G02F1/015G02F1/01G02F1/00
CPCG02F1/015G02F1/0102G02F1/0009
Inventor 潘武杨龙亮刘博文肖惠云
Owner CHONGQING UNIV OF POSTS & TELECOMM
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