A stepped trench lateral insulated gate bipolar transistor structure and manufacturing method
A technology of bipolar transistor and manufacturing method, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components and other directions, can solve problems such as voltage bounce, PN junction conduction, etc., to improve applicability, improve performance, improve Pressure-resistant effect
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[0062]The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.
[0063] A lateral insulated gate bipolar transistor (Lateral Insulated Gate Bipolar Transistor, LIGBT) provided by the present invention has excellent performance and can be widely used in various fields such as communication, transportation, energy, medicine, household appliances, and aerospace.
[0064] see figure 1 As shown, in an embodiment of the present invention, the lateral insulated gate bipolar transistor includes a substrate 10, a drift region 103 and a fi...
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