Mechanical system of resistance type 6-inch silicon carbide single crystal furnace

A silicon carbide single crystal and mechanical system technology, which is applied in the field of mechanical systems, can solve the problems of difficulty in growing large-sized silicon carbide single crystals, low yield, etc., and achieves advantages of large-scale popularization and use, low manufacturing cost, and reduced overall growth. cost effect

Pending Publication Date: 2022-01-28
哈尔滨科友半导体产业装备与技术研究院有限公司
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  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a mechanical system of a resistive 6-in

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  • Mechanical system of resistance type 6-inch silicon carbide single crystal furnace
  • Mechanical system of resistance type 6-inch silicon carbide single crystal furnace

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Embodiment Construction

[0019] The present invention will be further described below with reference to the accompanying drawings.

[0020] Combined with all the drawings, a mechanical system of a resistive 6-inch silicon carbide single crystal furnace. The blast cover driver 4 is disposed at the upper surface of the left and right ends of the base 9, respectively, and the top is connected to the large furnace cover 11 and the blast furnace cover 10, respectively, and the furnace body is insulated from the upper insulation chamber 6 and the bottom insulation chamber. The chamber 7 is composed, and the overall is located between the blast driver and the shot driver rack. The interlayer is provided with a circulating water system 5, and the top end is sequentially mounted. The bottom is placed in the mechanical rotary chamber 17. On the upper, the circular ring electrode 19 is in the inside of the furnace body and is placed in the lower surface of the large furnace cover, and the bottom end of the strut 15 ...

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Abstract

The invention relates to a mechanical system of a single crystal furnace, in particular to a mechanical system of a resistance type 6-inch silicon carbide single crystal furnace. The system comprises a base, a mechanical rotating chamber, a supporting column, a motor, a furnace body, a circulating water system, a large furnace cover, a small furnace cover, an electrode, a large furnace cover driving frame, a small furnace cover driving frame, a driving motor, a temperature measuring device, a vacuum detecting device, an air inlet hole and an air outlet hole. The system is characterized in that the base is a cuboid, the mechanical rotating chamber is embedded in the base, the supporting column is a cylinder and is arranged in the base, the furnace body is positioned above the base, the circulating water system is arranged at an interlayer, the large furnace cover is circular and is positioned above the furnace body, the electrode is circular and is positioned in the furnace body, the large furnace cover driving frame and the small furnace cover driving frame are positioned on two sides of the furnace body, the driving motor is arranged on the base, the temperature measuring device and the vacuum detecting device are located on the two sides of the small furnace cover, and the air inlet hole and the air outlet hole are formed in the right sides of the large furnace cover and the furnace body. The mechanical system can effectively improve the crystal quality and reduce the growth cost.

Description

Technical field [0001] The present invention relates to a mechanical system of a silicon carbide single crystal furnace, specifically a mechanical system of a resistive 6-inch silicon carbide single crystal furnace. Background technique [0002] The silicon carbide (SiC) is a third generation of semiconductor materials that are developed after the first generation of semiconductor material silicon and a second strap of azuria (GaaS). Since silicon carbide (SiC) has high thermal conductivity, high carrier saturation concentration, chemical properties, high hardness, anti-wear, etc., is widely used in aviation, aerospace detection, nuclear energy development, 5G infrastructure, etc. Advantages of alternative, and with the continuous improvement of silicon carbide materials and device processes, some Si areas are replaced by silicon carbide (SiC). [0003] At present, the silicon carbide growth method is mostly induced by induction heating, and the induction heating mode is often th...

Claims

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Application Information

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IPC IPC(8): C30B29/36C30B35/00
CPCC30B29/36C30B35/00
Inventor 不公告发明人
Owner 哈尔滨科友半导体产业装备与技术研究院有限公司
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