Power semiconductor device, preparation method thereof and electronic device
A technology of power semiconductors and devices, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as damage to power semiconductor devices, affecting reliability of power semiconductor devices, and short circuits between the first metal part and the second metal part , to simplify the structure, simplify the preparation, and improve the etching rate
Pending Publication Date: 2022-01-28
HUAWEI TECH CO LTD
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Problems solved by technology
However, after the insulating layer and the passivation layer are delaminated, the electric field between the first metal part and the second metal part will penetrate the delamination (the first metal part penetrates through the insulating layer and the passivation layer due to delamination. Under the action of the concentration of ions (such as some ions produced in water vapor), metal migration (also known as electromigration) will occur between the first metal part and the second metal part, which will easily lead to the first metal part and the second metal part. Short circuit between the second metal parts, resulting in damage to the power semiconductor device
In this way, the reliability of power semiconductor devices is affected
Method used
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[0040] Surface-mount technology (SMT) is currently the most popular technology and process in the electronics assembly industry. Since it was introduced to the market in the early 1970s, SMT has gradually replaced the traditional "manual plug-in" wave soldering assembly method and has become the mainstream of the modern electronic assembly industry. SMT technology promotes and promotes the development of electronic components in the direction of chip type, miniaturization, thinning, light weight, high reliability and multi-function.
[0041] A common power semiconductor device (such as a power supply, etc.) includes a passivation layer, a first metal part, a second metal part, and an insulating layer. The first metal part and the second metal part are arranged on the passivation layer at intervals, and the insulating layer covers On the passivation layer, the first metal part and the second metal part, the insulating layer fills the space between the first metal part and the s...
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The invention provides a power semiconductor device, a preparation method thereof and an electronic device. The power semiconductor device comprises a functional layer, a first metal part, a second metal part and an insulating layer, the functional layer comprises a first area, a second area and a third area, the third area is located between the first area and the second area, the functional layer further comprises a first blocking groove formed in the third area, the first metal part is arranged on the first area, the second metal part is arranged on the second area, the insulating layer comprises a main body and a first blocking part which are connected, the main body covers the first metal part, the second metal part and the third area, the first blocking groove is filled with the first blocking part, and the functional layer further comprises at least one passivation layer.
Description
technical field [0001] The present application relates to the field of semiconductor technology, in particular to a power semiconductor device, a manufacturing method thereof, and an electronic device. Background technique [0002] A power semiconductor device (such as a power supply, etc.) structure includes a passivation layer, a first metal part, a second metal part and an insulating layer, the first metal part and the second metal part are arranged on the passivation layer at intervals, and the insulating layer Covering the passivation layer, the first metal part and the second metal part, the insulating layer fills the space between the first metal part and the second metal part. However, after the insulating layer and the passivation layer are delaminated, the electric field between the first metal part and the second metal part will penetrate the delamination (the first metal part penetrates through the insulating layer and the passivation layer due to delamination. ...
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IPC IPC(8): H01L21/768
CPCH01L21/76816H01L21/76831H01L21/76847H01L21/76879H01L23/3192H01L23/62H01L23/60H01L21/31116H01L23/142H01L23/3171
Inventor 吴鸣周建丁永欢
Owner HUAWEI TECH CO LTD