High repetition frequency modulation cobalt-doped Q spinel crystal capable of being used for 1.5 micron wave band

A spinel and high repetition frequency technology, applied in the field of laser communication, can solve the problems of poor comprehensive performance, low Q-switching efficiency, high production cost, etc., and achieve the effects of high Q-switching efficiency, moderate cost, and high ring-turning efficiency

Pending Publication Date: 2022-02-01
苏州玖凌光宇科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Preferably, different from the two relatively mature Q-modulated crystals MgAlO and LaMgAlO, the cobalt-doped Q spinel crystal is prepared from cobalt oxide, magnesium oxide and aluminum oxide raw materials to prepare cobalt-doped aluminum-rich spinel, as Q-switched laser crystal and glass basic materials, the unique passive Q-switched crystal material overcomes the shortcomings of the poor comprehensive performance of the passive Q-switched crystal material doped with Co ions used in the prior art, and improves the high production cos

Method used

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Embodiment 1

[0020] The present invention provides a cobalt-doped Q spinel crystal that can be used for high-frequency modulation in the 1.5 micron band. Different from the prior art, the cobalt-doped Q spinel crystal is prepared from the following molar components: The ratio between cobalt oxide, magnesium oxide and aluminum oxide is x%:1-x%:3, x=0-0.5, and the cobalt-doped Q spinel crystal conversion efficiency prepared by this embodiment is relatively high , lower cost;

[0021] Different from the two relatively mature Q-switched crystals MgA1O and LaMgA1O at present, the cobalt-doped Q spinel crystal is prepared from cobalt oxide, magnesium oxide and aluminum oxide raw materials to prepare cobalt-doped aluminum-rich spinel as a Q-switched laser Crystal and glass basic materials, the unique passive Q-switching crystal material overcomes the shortcomings of the poor overall performance of the passive Q-switching crystal material doped with Co ions used in the prior art, and improves the ...

Embodiment 2

[0033] The present invention provides a cobalt-doped Q spinel crystal that can be used for high-frequency modulation in the 1.5 micron band. Different from the prior art, the cobalt-doped Q spinel crystal is prepared from the following components by weight: 55 parts of cobalt, 25 parts of magnesium oxide, and 35 parts of aluminum oxide. The ratio between the cobalt oxide, magnesium oxide and aluminum oxide is 1:1:1. The cobalt-doped Q tip prepared by this embodiment Spar crystal conversion efficiency is high, and the cost is moderate;

[0034] Different from the two relatively mature Q-switched crystals MgA1O and LaMgA1O at present, the cobalt-doped Q spinel crystal is prepared from cobalt oxide, magnesium oxide and aluminum oxide raw materials to prepare cobalt-doped aluminum-rich spinel as a Q-switched laser Crystal and glass basic materials, the unique passive Q-switching crystal material overcomes the shortcomings of the poor overall performance of the passive Q-switching ...

Embodiment 3

[0046] The present invention provides a cobalt-doped Q spinel crystal that can be used for high-frequency modulation in the 1.5 micron band. Different from the prior art, the cobalt-doped Q spinel crystal is prepared from the following components by weight: The ratio of cobalt oxide, magnesium oxide and aluminum oxide is x%:1-x%:3. The cobalt-doped Q spinel crystal conversion efficiency prepared by this embodiment is higher, and the cost is higher;

[0047] Different from the two relatively mature Q-switched crystals MgA1O and LaMgA1O at present, the cobalt-doped Q spinel crystal is prepared from cobalt oxide, magnesium oxide and aluminum oxide raw materials to prepare cobalt-doped aluminum-rich spinel as a Q-switched laser Crystal and glass basic materials, the unique passive Q-switching crystal material overcomes the shortcomings of the poor overall performance of the passive Q-switching crystal material doped with Co ions used in the prior art, and improves the high product...

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Abstract

The invention discloses a high repetition frequency modulation cobalt-doped Q spinel crystal capable of being used for a 1.5 micron wave band, the cobalt-doped Q spinel crystal is prepared from the following components according to a chemical dosage ratio: Co2O3 x%: MgO (1-x%): 3Al2O3, the ratio of cobalt oxide to magnesium oxide to aluminum oxide is x%: 1-x%: 3, and x=0-0.5. The cobalt-doped Q spinel crystal has the following beneficial effects that when cobalt oxide, magnesium oxide and aluminum oxide are selected to prepare the cobalt-doped Q spinel single crystal, the conversion efficiency of the cobalt-doped Q spinel crystal in the 1.5-micron wave band is high, the cost is moderate, according to the cobalt-doped Q spinel crystal, cobalt-doped aluminum-rich spinel is prepared from the cobalt oxide, the magnesium oxide and the aluminum oxide, as a 1.5-micron waveband laser Q-switching basic material, the unique passive Q-switching crystal material is good in comprehensive performance, low in production cost, convenient to grow, high in Q-switching efficiency and capable of achieving 500 kHz high repetition frequency.

Description

technical field [0001] The invention relates to the field of laser communication, in particular to a cobalt-doped Q spinel crystal that can be used for high frequency modulation in the 1.5 micron wave band. Background technique [0002] The 1.56μm band femtosecond pulsed laser has a wide range of application values ​​in the fields of laser communication, medical diagnosis, micro-nano processing, precision measurement, etc., especially through the optical frequency doubling technology, the 1.56μm frequency doubling laser can work in the output band of the Ti:Sapphire laser, To further expand its application scenarios, currently, Ti:Sapphire oscillators and amplifier products are mature, and have significant index advantages in terms of extremely short pulses (<20fs) and ultra-large energy (>1mJ). Compared with Ti:sapphire lasers, doped Erbium fiber femtosecond laser products have significant cost-effective advantages in terms of 50-100fs pulse width and <10nJ single ...

Claims

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Application Information

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IPC IPC(8): C30B29/22C30B15/00H01S3/16
CPCC30B29/22C30B15/00H01S3/1631
Inventor 邹宇琦董骏司万政
Owner 苏州玖凌光宇科技有限公司
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