Three-color detector

Abstract

The invention discloses a three-color detector. The three-color detector comprises a detector body, wherein the detector body comprises a p-type antimony-based superlattice material layer, a p-type topological insulator thin film material layer, a BN two-dimensional material layer and a p-type AlGaN material layer which are sequentially stacked from bottom to top. Specifically, the p-type antimony-based superlattice material layer, the p-type topological insulator thin film material layer, the BN two-dimensional material layer and the p-type AlGaN material layer which are sequentially stacked from bottom to top are used for forming the detector body, the p-type AlGaN material layer is provided with an upper metal electrode, the p-type antimony-based superlattice material layer is provided with a middle metal electrode and a lower metal electrode, by adjusting bias voltages applied to the upper metal electrode, the middle metal electrode and the lower metal electrode respectively, the p-type antimony-based superlattice material layer can detect an infrared band and a visible light band, the p-type AlGaN material layer can detect an ultraviolet band, and detection of the three bands is achieved.

Description

technical field [0001] The present disclosure generally relates to the technical field of semiconductor photodetectors, and specifically relates to a three-color detector. Background technique [0002] Photodetectors are widely used in various fields such as national economy and military affairs. Photodetectors based on detection in different wavelength bands play an important role in the detection of different fields. In the visible and near-infrared, photodetectors are mainly used in ray measurement and detection, industrial automatic control, photometric measurement, etc.; in the ultraviolet band, the main uses are military and civilian applications such as ultraviolet guidance, ultraviolet warning, ultraviolet communication, ultraviolet countermeasures, and power monitoring. field. The traditional group III nitride material system represented by GaN / AlGaN system is the best material for ultraviolet detection, but it is difficult to achieve visible and near-infrared det...

AI Technical Summary

Problems solved by technology

The traditional group III nitride material system represented by gallium nitride / aluminum gallium nitride system is the best material for ultraviolet detection, but it is difficult to achieve visible and near-infrared detection. Sensors are increasingly mature in visible light and near-infrared, but it is difficult to extend to ultraviolet detection

Therefore, we propose a three-color detector to solve the above-mentioned problems of limited response and limited detection band of photodetectors with a single material

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