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Ion-assisted multi-target magnetron sputtering device

A magnetron sputtering and ion-assisted technology, applied in the field of ion-assisted multi-target magnetron sputtering equipment, can solve the problem of low coverage, achieve the effect of increasing coverage, improving deposition rate and production efficiency, and saving costs

Pending Publication Date: 2022-02-08
浙江艾微普科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

figure 1 The PVD sputtering mode shown is face-to-face deposition, that is, the target surface is parallel to the wafer surface. This deposition method has low coverage

Method used

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  • Ion-assisted multi-target magnetron sputtering device
  • Ion-assisted multi-target magnetron sputtering device
  • Ion-assisted multi-target magnetron sputtering device

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0035] refer to Figure 2 to Figure 8 The embodiment of the ion-assisted multi-target magnetron sputtering equipment of the present invention will be further described.

[0036] In the description of the present invention, it should be noted that for orientation words, such as the term "center", "horizontal (X)", "longitudinal (Y)", "vertical (Z)", "length", " Width", "Thickness", "Top", "Bottom", "Front", "Back", "Left", "Right", "Vertical", "Horizontal", "Top", "Bottom", "Inner ", "outside", "clockwise", "counterclockwise" and other indication orientations and positional relationships are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying the Means that a device or element must have a specific orientation, be constructed and operated in a specific orientation should not be construed as limiting the specific protecti...

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PUM

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Abstract

The invention discloses an ion-assisted multi-target magnetron sputtering device which comprises an uploading cavity, a transport cavity and a process cavity. A manipulator is arranged in the transport cavity, a wafer table, at least one ion source device and at least two magnetron devices are arranged in the process cavity, and the wafer table is located at the lower part. The ion source device and the magnetron device are located at the upper portion, the ion source device and the magnetron device are evenly distributed around the center of the wafer table, and the ion source device and the magnetron device both face the wafer table and are arranged in an inclined manner with the wafer table by an angle. According to the present invention, an ion-assisted PVD sputtering system of a plurality of target materials can be arranged in one process cavity, multiple process cavities are not needed, repeated clamping is not needed, and the efficiency is high.

Description

technical field [0001] The invention belongs to the technical field of magnetron sputtering equipment, and more specifically relates to an ion-assisted multi-target magnetron sputtering equipment. Background technique [0002] Magnetron sputtering technology and equipment are the basic technology and equipment of micro-nano processing, and the core and foundation of modern microelectronics industry manufacturing. It is similar to the traditional industry of steel and other material preparation industries, providing rich, A comprehensive variety of device construction and auxiliary materials. The magnetron sputtering technology is mature, and the prepared films have superior performance, and can manufacture almost all kinds of metal, semiconductor, and insulator thin film materials. It is the core technology of semiconductors, MEMS, solar energy, displays, LEDs, etc. and various modern microelectronic devices; its equipment With low cost and wide application, it is an essent...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35
CPCC23C14/352C23C14/3442
Inventor 唐云俊王昱翔
Owner 浙江艾微普科技有限公司