Oscillator and chip

Abstract

The embodiment of the invention provides an oscillator and a chip. The oscillator comprises a first inverse F-type oscillator and a second inverse F-type oscillator; the first inverse F-type oscillator comprises a first resonant cavity, a first N-type metal oxide semiconductor transistor and a first P-type metal oxide semiconductor transistor; the second inverse F-type oscillator comprises a second resonant cavity, a second N-type metal oxide semiconductor transistor and a second P-type metal oxide semiconductor transistor; the grid electrode of the first N-type metal oxide semiconductor transistor is connected with the grid electrode of the second P-type metal oxide semiconductor transistor; and the grid electrode of the first P-type metal oxide semiconductor transistor is connected with the grid electrode of the second N-type metal oxide semiconductor transistor. Therefore, the quality factor Q value of the resonant cavity at the second harmonic frequency can be increased, the quality factor Q value of the resonant cavity at the fundamental frequency cannot be reduced, and the phase noise and the quality factor (FoM) of the oscillator are optimized.

Description

Technical field [0001] The present application relates to the field of communication, and in particular, to a oscillator and a chip. Background technique [0002] With the continuous development of oscillator technology, existing wireless systems can benefit from the local oscillator of low phase noise high frequency bands, and can use intensive modulation schemes on wide signal bandwidth. When the local oscillator frequency rises from radio frequency to millimeter waves, the capacitive device tends to lead the resonant circuit quality factor of the pressure-controlled oscillator, resulting in a severe trade-off between phase noise and frequency tuning. At the same time, this compromise is further intensified under advanced process, which is due to the advanced process nodes require more metal layers to connect transistors with higher density, and the metal thickness is reduced, resulting in the quality of the metal oxide metal capacitor. The factor is lowered. In addition, in ad...

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Problems solved by technology

At the same time, this trade-off is further exacerbated by advanced process nodes because more metal layers are required to connect transistors at a higher density in advanced process nodes, and the metal thickness is thus reduced, resulting in the quality of metal-oxide-metal capacitors. Factor down

In addition, deteriorating flicker noise of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) in advanced process nodes is another challenge for VCO phase noise performance

Therefore, the phase noise and figure of merit (FoM) of VCOs in 28nm CMOS process are lower compared to those in recent 65nm and 40nm[5] complementary metal-oxide-semiconductor (CMOS) processes. Difference

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