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Method and system for measuring threshold voltage

A technology of threshold voltage and measurement method, which is applied in the field of threshold voltage measurement method and its system, and can solve problems such as threshold voltage offset, device damage, and time-consuming

Pending Publication Date: 2022-02-25
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, there is a contradiction between accuracy and test efficiency in the method of linear sweep voltage. If the set voltage step size is small to improve the accuracy, it will be very time-consuming; if the set voltage step size is increased in order to reduce the test time long, it will reduce the accuracy
Relatively speaking, the dichotomous scanning method is more accurate and efficient, but during the test process, due to immaturity of the semiconductor device and the inability to withstand high voltage, the device may be damaged; or the semiconductor device may be damaged due to the application of high or low voltage , resulting in slight erasing or writing, which in turn leads to threshold voltage shifts, such as figure 1 As shown in , the semiconductor device was slightly erased during the first threshold voltage measurement, which caused the second threshold voltage measurement to be different from the first

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  • Method and system for measuring threshold voltage

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Embodiment 1

[0035] figure 2 A flow chart of a threshold voltage measurement method provided in this embodiment, such as figure 2 As shown, the present invention provides a kind of threshold voltage measuring method, comprising:

[0036] Step S1: Set the maximum working voltage and the minimum working voltage of the MOS tube as the upper limit voltage and the lower limit voltage, and perform step S2;

[0037] Step S2: using the value between the upper limit voltage and the lower limit voltage as a scanning voltage, applying the scanning voltage to the gate of the MOS transistor, and obtaining the drain current of the MOS transistor, and performing step S3;

[0038]Step S3: making a difference between the drain current and the target current to obtain a first difference, and when the absolute value of the first difference is less than or equal to a first set value, use the scanning voltage as the MOS transistor threshold voltage output; when the absolute value of the first difference is...

Embodiment 2

[0062] Figure 5 A schematic diagram of a threshold voltage measurement method provided in Embodiment 2 of the present invention, as shown in Figure 5 As shown, the difference from Embodiment 1 is that in this embodiment, in step S2, the value between the upper limit voltage and the lower limit voltage is used as the scanning voltage, wherein the upper limit voltage and the lower limit voltage are Differences between the values ​​between the maximum operating voltage and the minimum operating voltage are respectively obtained to obtain a fourth difference and a fifth difference, the absolute values ​​of the fourth difference and the fifth difference are greater than the The second setting value is to ensure that the maximum operating voltage or the minimum operating voltage is not applied to the MOS transistor.

[0063]To sum up, the present invention provides a threshold voltage measurement method and system thereof, step S1: set the maximum operating voltage and minimum op...

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Abstract

The invention provides a method and system for measuring threshold voltage, and the method comprises the steps: S1, setting the maximum working voltage and the minimum working voltage of an MOS transistor as an upper limit voltage and a lower limit voltage, and executing S2; s2, taking a value between the upper limit voltage and the lower limit voltage as a scanning voltage, applying the scanning voltage to a grid electrode of the MOS transistor, obtaining a drain electrode current, and executing the step S3; s3, subtracting the drain current from a target current to obtain a first difference value, and outputting the scanning voltage as a threshold voltage when the absolute value of the first difference value is smaller than or equal to the first set value; and when the absolute value of the first difference value is greater than the first set value, adjusting the upper limit voltage and the lower limit voltage by judging the magnitude relationship between the drain current and the target current, and returning to the step S2. The damage to the MOS transistor and the offset of the threshold voltage caused by the application of the maximum working voltage and the minimum working voltage are avoided.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a threshold voltage measurement method and system thereof. Background technique [0002] With the continuous advancement of semiconductor technology, the requirements for the manufacturing process of integrated circuits are increasing day by day. However, due to the long manufacturing cycle and high cost of integrated circuits, it is particularly important to improve the production efficiency of the manufacturing process and the yield rate of products. After the semiconductor device is manufactured and before packaging, in order to ensure the yield of the semiconductor device and avoid waste of packaging, it is necessary to test the electrical performance of the semiconductor device to prevent unqualified devices from entering the next step. [0003] In the electrical measurement of current semiconductor devices, the most typical is the measurement of the threshold voltage. General...

Claims

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Application Information

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IPC IPC(8): G01R31/26
CPCG01R31/2621
Inventor 杜宏亮
Owner SHANGHAI HUALI MICROELECTRONICS CORP