Manufacturing method of contact hole for semiconductor device

Abstract

The invention relates to the technical field of semiconductors, and discloses a manufacturing method of a contact hole for a semiconductor device, which comprises the following steps: S1, manufacturing a first etching stop layer on an interaction layer on a substrate; S2, manufacturing an oxide layer on the first etching stop layer, wherein the etching rate of the first etching stop layer is smaller than that of the oxide layer; S3, etching the oxide layer, and manufacturing a first contact hole, wherein the etching end point of the first contact hole is in the first etching stop layer; S4, etching a first etching stop layer in the first contact hole, manufacturing a second contact hole, wherein the bottom of the second contact hole extends to the interaction layer. In actual use, through the first etching stop layer, the etching end points in the step S3 can be located on the first etching stop layer, and then secondary etching is carried out on the first etching stop layer to manufacture the complete contact hole. Therefore, the condition of over-etching or insufficient etching of the contact holes at different positions is avoided, the difference of all the contact holes is reduced, and the performance uniformity is good.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a contact hole of a semiconductor device. Background technique [0002] In the manufacturing process of integrated circuits, the circuit image is transferred to the wafer through processes such as exposure, development and etching. After the circuit diagram is drawn on the wafer, a metal interconnection layer will be made on the wafer. Contact holes are made on the connecting layer and metal electrodes are made on the contact holes to realize the interconnection of electronic devices on the wafer and the interaction between the circuits on the wafer and peripheral signals. [0003] As the integration of integrated circuits on the wafer becomes higher and higher, the number of electronic components on the wafer is also increasing, and correspondingly, the requirements for the manufacturing process of the contact holes are also more stringent. In ...

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Problems solved by technology

[0004] In view of the deficiencies in the background technology, the present invention provides a method for manufacturing a contact hole for a semiconductor device. The technical problem to be solved is that the existing contact hole manufacturing process has the problems of insufficient etching, overetching and high cost.

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