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Making method of light detector based on ZnO vertical nanometer rod array and application of light detector

A nanorod array and photodetector technology, which is applied in the field of photodetection, can solve the problem of inability to realize low-cost construction of large-scale image sensors, and achieve the effects of good practical value, good performance uniformity and low cost

Active Publication Date: 2017-10-20
HEFEI UNIV OF TECH
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Problems solved by technology

However, this method needs to rely on the electron beam exposure system, and the low-cost construction of a large-scale image sensor cannot be achieved.

Method used

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Embodiment Construction

[0022] 1. A photoconductive detector preparation process based on ZnO vertical nanorod arrays:

[0023] (1) Preparation of a patterned ZnO seed layer: combined with photolithography technology, a patterned ZnS film with a thickness of 10 nm and a size of 20 × 20 μm was deposited by electron beam evaporation on a silicon wafer substrate containing a 300 nm silicon oxide layer. The target material used for electron beam deposition is a ZnS crystal with a purity of 99.99% and a size of millimeters. Then, the patterned ZnS film was oxidized in air at 500 °C for 2 h to become a patterned ZnO film. This patterned ZnO thin film serves as a seed layer for the fabrication of vertical ZnO nanorod arrays.

[0024] (2) Preparation of vertical ZnO nanorod arrays: On the patterned ZnO seed layer, photolithography was used to fix the electrode pattern, and 5 nm Cr and 10 nm Au were deposited on the seed layer as source and drain electrodes. Subsequently, the substrate with the electrode-pa...

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Abstract

The invention discloses a making method of a light detector based on a ZnO vertical nanometer rod array and an application of the light detector. A graphical ZnS film is deposited on a silicon chip substrate containing a oxygen ambient silica layer through electron-beam evaporation, secondly, oxidation of graphical ZnS film is carried out for 2-2.5 hours in the air under the temperature of 500-510 DEG C, the graphical ZnO film is formed, and the graphical ZnO film is taken as a seed layer of a ZnO vertical nanometer rod array; an electrode graph is fixed on the acquired graphical ZnO film seed layer through the lithography technology, Cr and Au are deposited on the seed layer as source and drain electrodes, a substrate of the graphical ZnO seed layer containing the electrodes is made to face downwards and suspend in mixture growth liquid prepared by Zinc nitrate hexahydrate and hexamethylenetetramine, heating is carried out, after proper-time insulation, deionized water rinsing of the acquired sample is carried out, and the light detector is acquired.

Description

technical field [0001] The invention relates to the field of photodetection, in particular to a preparation method and application of a photodetector based on ZnO vertical nanorod arrays. Background technique [0002] One-dimensional nanomaterials with specific compositions are widely used to improve the performance of photodetectors, and can also be used to realize the miniaturization of devices. According to the working mode of photodetectors, they can be divided into two categories: photoconductive detectors and photodiodes. As far as the photoconductive detector is concerned, absorbing a photon with an energy greater than the energy of the bandgap can generate a pair of electron-hole pairs, which can change the conductance of the photosensitive material. In general, materials with high carrier mobility are helpful to obtain high-responsivity photoconductive detectors, because the photogenerated carriers can cycle many times in the external circuit. Paradoxically, due t...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L31/1804Y02P70/50
Inventor 王敏马杨许智豪吴从军徐志勇杨金华贾良鹏
Owner HEFEI UNIV OF TECH
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