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Substrate processing method, substrate processing apparatus, and semiconductor device manufacturing method

A substrate processing method and technology for a substrate processing device are applied in the fields of substrate processing device and semiconductor manufacturing, and can solve the problems of reducing substrate processing cost, and achieve the effects of reducing inner surface resistance, saving processing capacity and process gas consumption cost, and improving film characteristics.

Pending Publication Date: 2022-03-01
WONIK IPS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The object of the present invention is to provide a substrate processing method and a semiconductor manufacturing method to solve the above-mentioned problems, and reduce the process gas supplied in the depressurization step when the chamber is pressurized and depressurized during the process. flow, thereby improving the surface resistance of the film, reducing the burden of scrubber processing capacity and the amount of process gas, so that the cost of substrate processing can be significantly reduced

Method used

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  • Substrate processing method, substrate processing apparatus, and semiconductor device manufacturing method
  • Substrate processing method, substrate processing apparatus, and semiconductor device manufacturing method
  • Substrate processing method, substrate processing apparatus, and semiconductor device manufacturing method

Examples

Experimental program
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Effect test

Embodiment 2

[0123] In Example 2, the process gas supply amount M3 is set to 10L in the depressurization step S30, in which case the resistance is reduced from 101.34Ω / sq to 88.24Ω / sq, and then after the depressurization step S30 about 13% lower.

Embodiment 3

[0124] Embodiment 3 is to cut off the supply of the process gas in the decompression step S30, and set the process gas supply M3 to 0L. In this case, the surface resistance is reduced from 102.05Ω / sq to 87.09Ω / sq, and then After the depressurization step S30, it is reduced by about 15%.

[0125] In summary, it is considered that the surface resistance of the film after the step S30 is reduced by 12%, 13% and 15% by changing the process gas supply amount M3 in the step S30 to 20L, 10L and 0L respectively. In the tendency of left and right, the less the process gas supply amount M3 in the depressurization step S30 is, the more impurities in the film are removed, and it can be confirmed quantitatively that the surface resistance is improved.

[0126] On the other hand, as a semiconductor manufacturing method including a deposition step of forming a thin film on the surface and a substrate processing step of improving the characteristics of the thin film after performing the depos...

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Abstract

Disclosed is a substrate processing method using a substrate processing apparatus, the substrate processing apparatus including: a chamber forming a processing space for processing a substrate; a substrate support portion provided in the chamber to support the substrate; a gas injection part provided at an upper portion of the substrate support part to inject a gas for performing a process; an exhaust part that discharges gas of the processing space and includes a valve for controlling pressure; the heater is arranged on the outer side of the chamber; the substrate processing method includes repeating a pressure-changing step at least once, the pressure-changing step including: a pressure-increasing step of injecting a process gas into the processing space to increase the internal pressure of the chamber from a first pressure to a second pressure higher than normal pressure; a pressure reduction step of reducing the internal pressure of the chamber from the second pressure to a third pressure; wherein the process gas supply amount in the step of pressure reduction is smaller than the process gas supply amount in the step of pressure increase, and the third pressure is normal pressure.

Description

technical field [0001] The present invention relates to a substrate processing method, and more particularly, to a substrate processing method for adjusting the flow rate of a process gas in a step-down step in a pressure changing process for improving thin film characteristics, a substrate processing apparatus using the substrate processing method, and a semiconductor manufacturing method . Background technique [0002] Devices such as semiconductors, LCD substrates, OLED substrates, etc. are manufactured through a semiconductor process including one or more deposition processes and etching processes. [0003] In particular, a semiconductor device may form a thin film on a substrate surface by a deposition process to form a circuit pattern, etc., which may be performed by various semiconductor processes such as CVD, PVD, and ALD. [0004] On the other hand, after a thin film is formed on the substrate by a deposition process, such as Patent Document 1, a substrate treatmen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/52C23C16/455C23C14/54C23C16/06C23C16/34C23C14/14C23C14/06H01L21/67
CPCC23C16/52C23C16/45557C23C16/45525C23C14/54C23C16/06C23C16/34C23C14/14C23C14/0641H01L21/67017C23C16/56H01L21/28562H01L21/28556C23C16/45527H01L21/0228H01L21/02186
Inventor 朴坰权玹范李大成
Owner WONIK IPS CO LTD