Assembly for guiding gas circulation in silicon wafer epitaxial process and epitaxial growth device

Abstract

The embodiment of the invention discloses an assembly for guiding gas circulation in a silicon wafer epitaxy process and an epitaxial growth device. The assembly comprises a base ring which surrounds a silicon wafer and is provided with a gas inlet embedding hole; the first gas inlet guide piece is embedded in the gas inlet embedding hole, defines a first gas inlet channel used for guiding reaction gas to horizontally flow towards the silicon wafer, and comprises a plurality of first partition plates used for partitioning the first gas inlet channel; the annular lining is arranged between the base ring and the silicon wafer; the top surface of the lining is used for guiding the reaction gas from the first gas inlet guide piece to circulate towards the silicon wafer; the second gas inlet guide piece is arranged between the first gas inlet guide piece and the lining, defines a second gas inlet channel for guiding the reaction gas leaving the first gas inlet guide piece to vertically and upwards flow towards the silicon wafer, and comprises a plurality of second partition plates which are used for separating the second gas inlet channel and correspond to the plurality of first partition plates; the second intake guide is disposed to remain fixed relative to the first intake guide.

Description

technical field [0001] The invention relates to the field of semiconductor silicon chip production, in particular to a component for guiding gas flow in the silicon chip epitaxial process and a device for the silicon chip epitaxial growth. Background technique [0002] In the production process of epitaxial silicon wafers, the method of chemical vapor deposition is generally used to guide the silicon source gas or reaction gas to the surface of the silicon wafer carried in the process chamber of the high-temperature closed reaction furnace to grow on the upper surface of the silicon wafer. An epitaxial layer. Compared with polished silicon wafers, epitaxial silicon wafers have the advantages of less surface defects and the ability to control the thickness and resistivity of the epitaxial layer. [0003] In the current reactor, see figure 1 Shown in plan view, the assembly 10A for guiding the reaction gas RG schematically shown by parallel arrow lines to the silicon wafer W...

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Problems solved by technology

[0005] In order to solve the above technical problems, the embodiment of the present invention expects to provide a component for guiding gas flow in the epitaxial process of silicon wafers and a device for epitaxial growth of silicon wafers, even when the base ring is installed relative to the bushing. The installation accuracy is not guaranteed enough, and multiple guide partitions can also be aligned with corresponding multiple bushing partitions one by one, avoiding the situation where the thickness of the entire epitaxial layer cannot be adjusted, and avoiding the silicon wafer surface. Local gas loss and overall uneven distribution, the flatness and thickness uniformity of epitaxial silicon wafers are guaranteed

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