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Beta-gallium oxide crystal and growth method and application thereof

A growth method, gallium oxide technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of polycrystalline β-gallium oxide crystals, reduce the growth quality of β-gallium oxide crystals, and improve the growth quality , less oxygen vacancy defects, and high crystal quality

Active Publication Date: 2022-03-01
北京铭镓半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005]However, in the process of growing β-gallium oxide crystals using the guided mode method, the raw material of gallium oxide will decompose and volatilize during the growth of high temperature and oxygen deficiency, resulting in the β-Gallium oxide crystals appear polycrystalline, which reduces the growth quality of β-Gallium oxide crystals

Method used

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  • Beta-gallium oxide crystal and growth method and application thereof

Examples

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Comparison scheme
Effect test

Embodiment 1

[0039] The β-gallium oxide crystal of Example 1 was prepared by the following method:

[0040] (1) Add the gallium oxide raw material into the mold in the crucible, insert one end of the seed rod into the growth furnace, and connect the other end with a lifting device, place the seed crystal at the lower end of the seed rod and directly above the mold, so that When the seed rod is pulled, the seed crystal touches the liquid surface at the top of the mold;

[0041] Under the condition of 0.5MPa pure argon, the temperature in the furnace is heated to 1840°C to melt the gallium oxide raw material in the crucible;

[0042] (2) Lower the seed rod to weld the seed crystal to the gallium oxide raw material on the top of the mold; pull the seed crystal at a rate of 6 mm / h to start seeding;

[0043] (3) When the seeding length reaches 10 mm, continue to pull the seed rod at a rate of 6 mm / h, and at the same time lift the crucible at 0.4 mm / h to make the crystal shoulder spontaneously;...

Embodiment 2

[0045] The β-gallium oxide crystal of Example 2 was prepared by the following method:

[0046] (1) Under the condition of 99% argon and 1% oxygen at 0.5MPa, the temperature in the furnace is heated to 1840°C to melt the gallium oxide raw material in the crucible;

[0047] (2) with embodiment 1;

[0048] (3) with embodiment 1.

Embodiment 3

[0050] The β-gallium oxide crystal of Example 3 was prepared by the following method:

[0051] (1) Under the conditions of 95% argon and 5% oxygen at 0.5MPa, the temperature in the furnace is heated to 1840°C to melt the gallium oxide raw material in the crucible;

[0052] (2) with embodiment 1;

[0053] (3) with embodiment 1.

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Abstract

The invention relates to the technical field of wide bandgap semiconductor crystallization, and particularly discloses a beta-gallium oxide crystal and a growth method and application thereof, the growth method of the beta-gallium oxide crystal comprises the following operation steps: (1) under inert gas of 0.4-0.6 MPa, heating and melting a gallium oxide raw material; (2) lowering the seed crystal, and welding; pulling the seed crystal, and starting seeding; (3) after seeding, continuing to lift the seed crystal, and lifting the crucible at the same time, the lifting rate of the crucible is smaller than the lifting rate of the seed crystal, so that the crystal is self-released to shoulder; after shouldering, stopping lifting the crucible, and cooling to enable the crystals to grow in an equal-diameter manner; and demolding, stopping lifting the seed crystal, and cooling to 23 DEG C to obtain the beta-gallium oxide crystal. The lowest dislocation density of the beta-gallium oxide crystal is 0.98 * 10 < 4 > / cm < 2 >, the half-peak width of a rocking curve can reach 43 arc seconds, and the growth quality of the beta-gallium oxide crystal is improved.

Description

technical field [0001] This application relates to the field of wide bandgap semiconductor crystallization, more specifically, it relates to a β-gallium oxide crystal and its growth method and application. Background technique [0002] β-Gallium oxide crystal is a kind of semiconductor crystal that can be grown by the melt method. It has the advantages of large band gap, high thermal conductivity, high breakdown field strength, fast saturated electron drift rate, stable chemical properties and low cost. , has been widely used in deep ultraviolet optoelectronic devices, high power and high voltage devices and other fields. [0003] The growth method of β-gallium oxide crystal was originally the pulling method. The pulling method is to heat and melt the raw materials constituting the crystal in a crucible, adjust the temperature field in the furnace, make the upper part of the melt in a supercooled state, and let the seed crystal contact the molten After the surface of the se...

Claims

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Application Information

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IPC IPC(8): C30B29/16C30B15/34
CPCC30B29/16C30B15/34
Inventor 胡开朋吕进陈政委赵德刚吴忠亮
Owner 北京铭镓半导体有限公司
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