Manufacturing method of semiconductor device

Abstract

The invention discloses a method for manufacturing a semiconductor device, which comprises the following steps of: S1, finishing a process before ion implantation into a lightly doped drain doped region, and forming a device comprising a dummy gate structure formed on the surface of a semiconductor; the semiconductor device has a first direction and a second direction, and a source region and a drain region are formed on two sides of the second direction of the semiconductor device; s2, depositing a doping layer and annealing; and S3, removing the redundant doping layer. According to the invention, the doped layer of the doped region is uniformly distributed, so that the carrier mobility is improved, the leakage current between the source electrode and the drain electrode caused by the shortening of the length of the conductive channel is avoided or inhibited, and the performance of the transistor is improved.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuits, in particular to a method for manufacturing a semiconductor device. Background technique [0002] With the continuous improvement of the integration level of semiconductor devices, the feature size is gradually reduced, and the challenges from manufacturing and design have prompted the development of three-dimensionally designed transistors. Examples include fin field effect transistors (FinFETs) and nanosheet transistors (nanosheet). [0003] Compared with the existing planar transistors, FinFET is an advanced semiconductor device for 20nm and below process nodes, including a Fin perpendicular to the bulk silicon substrate. The source region, drain region and channel region are defined inside, and different FinTETs are separated by the STI structure. The gate stack formed by the gate insulating layer and the gate layer surrounds Fin on the side and the top surface, so that the F...

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Problems solved by technology

[0005] However, the use of ion implantation in the lightly doped drain doped region will make the distribution of the doped layer in the doped region uneven, resulting in a decrease in carrier mobility, which does not prevent or suppress the shortening of the conductive channel length. The effect of causing leakage current between source and drain

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