Antimony triselenide silicon-based electric dimming switch, optical switch array and chip

Abstract

The invention relates to the technical field of optical communication devices, in particular to an antimony triselenide silicon-based electric dimming switch, an optical switch array and a chip. Comprising the steps that an antimony triselenide phase change material covers an interference arm optical waveguide based on a Mach-Zehnder interferometer structure to form an antimony triselenide silicon-based electric dimmer switch, and an antimony triselenide phase change material covers a micro-ring optical waveguide based on a micro-ring structure to form the antimony triselenide silicon-based electric dimmer switch. A plurality of two types of antimony triselenide silicon-based electric dimmer switches are respectively cascaded to form two types of antimony triselenide silicon-based electric dimmer switch arrays. By adopting the antimony triselenide phase change material, the energy consumption can be effectively reduced, the device size can be reduced, and the electro-phase change performance can be better on the premise of ensuring small insertion loss.

Description

technical field [0001] The invention relates to the technical field of optical communication devices, in particular to an antimony triselenide silicon-based electric dimming switch, an optical switch array and a chip. Background technique [0002] Most of the traditional optical switch schemes are based on the thermo-optic tuning or electro-optic tuning principle of silicon-based optoelectronics technology, and are realized by Mach-Zehnder interferometer (MZI) structure or micro-ring (MRR) structure. These schemes can be better compatible with the CMOS process, and can achieve faster switching speeds (nanosecond order) on a relatively small volume (hundreds of microns), but there are also the following deficiencies: 1. The loss of the optical switch chip and high crosstalk. The transmission loss of the silicon waveguide is relatively large (usually about 3dB / cm), and the isolation of light is relatively low during the electro-optic tuning of the carrier dispersion effect, a...

AI Technical Summary

Problems solved by technology

These schemes can be better compatible with the CMOS process, and can achieve faster switching speeds (nanosecond order) on a relatively small volume (hundreds of microns), but there are also the following deficiencies: 1. The loss of the optical switch chip and large crosstalk

The transmission loss of silicon waveguide is large (usually about 3dB / cm), and the carrier dispersion effect electro-optic tuning has low isolation to light and large crosstalk

2. The drive power consumption of the optical switch chip is high and volatile

Both thermal regulation and electric regulation need to consume a lot of power to maintain a certain switching state, and the switching state cannot be maintained after power off

3. The switching unit has low tuning efficiency and large size

[0004] The current electro-reconfigurable phase-change photonic device technical solutions still have the following problems to be solved urgently: 1. The optical constant contrast of the phase-change materials used in the existing solutions is not large enough in the communication band, and the loss is high; 2. The common disadvantages of phase transition process are relatively large randomness, low accuracy, and poor reconstruction stability; 3. The advantages of plasma electric phase transition are that the energy required for regulation is small, and the size of the device is small, but the static insertion of the optical path Large loss, not suitable for integration; 4. The micro-heater-induced phase change solution has a medium device size and has a certain insertion loss for the optical path

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