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Nitride-based semiconductor device and method for manufacturing same

A nitride-based, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., to achieve the effects of increasing equivalent resistance, reducing gate leakage current, and good electrical performance

Pending Publication Date: 2022-03-11
INNOSCIENCE (SUZHOU) TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The gate electrode is placed over the doped III-V semiconductor layer

Method used

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  • Nitride-based semiconductor device and method for manufacturing same
  • Nitride-based semiconductor device and method for manufacturing same
  • Nitride-based semiconductor device and method for manufacturing same

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Embodiment Construction

[0015] Common reference numbers are used throughout the drawings and detailed description to refer to the same or like components. Embodiments of the present disclosure will be readily understood from the following detailed description taken in conjunction with the accompanying drawings.

[0016] Specifies a spatial description for the orientation of a component shown in an associated figure, such as "above", "on", "below", " Up, Left, Right, Down, Top, Bottom, Vertical, Horizontal, Side, Higher, Lower, Upper , "above", "below" and so on. It should be understood that the spatial descriptions used herein are for illustration purposes only, and that actual implementations of the structures described herein may be spatially arranged in any orientation or manner, provided that the advantages of the embodiments of the present disclosure are not Due to this arrangement there may be deviations.

[0017] Furthermore, it should be noted that in actual devices, the actual shape of va...

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Abstract

A nitride-based semiconductor device includes first and second nitride-based semiconductor layers, a doped III-V semiconductor layer, a gate, a source electrode, and a drain electrode. The doped III-V semiconductor layer is disposed over the second nitride-based semiconductor layer and has opposing first sidewalls that are recessed inward toward a body of the doped III-V semiconductor layer between the sidewalls to form a curved profile at a bottom of the doped III-V semiconductor layer. The gate electrode is disposed over the doped III-V semiconductor layer. The source electrode and the drain electrode are disposed over the second nitride-based semiconductor layer. The gate electrode is located between the source electrode and the drain electrode.

Description

technical field [0001] The present invention generally relates to a nitride-based semiconductor device. More specifically, the present invention relates to a nitride-based semiconductor device having a doped III-V semiconductor layer having a curved profile. Background technique [0002] In recent years, intensive research on high electron mobility transistors (HHMTs) has become very common, especially for high-power switching and high-frequency applications. III-nitride-based HEMTs utilize a heterojunction interface between two materials with different bandgaps to form a quantum well-like structure that accommodates a two-dimensional electron gas (2DEG) region to meet high power / Frequency device needs. In addition to HEMTs, examples of devices with heterostructures further include heterojunction bipolar transistors (HBTs), heterojunction field effect transistors (HFETs), and modulation doped FETs (MODFETs). Contents of the invention [0003] According to an aspect of ...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/778H01L21/335
CPCH01L29/0607H01L29/0684H01L29/778H01L29/66462H01L29/7786H01L29/2003H01L29/1066H01L29/0657H01L29/42316
Inventor 何川蒲小庆郝荣晖章晋汉黃敬源
Owner INNOSCIENCE (SUZHOU) TECH CO LTD
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