Self-rectification memristor array and preparation method and application thereof

A memristor and self-rectification technology, applied in the field of microelectronics, can solve problems such as inapplicability of device solutions, achieve the effects of reducing mutual influence, suppressing leakage current effects, and increasing storage density

Pending Publication Date: 2022-03-15
HUAZHONG UNIV OF SCI & TECH
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Problems solved by technology

[0004] The demand for high-density storage makes memory arrays develop from two-dimensional to three-dimensional, but the leakage current problem in three-dimensional integrated arrays makes many device solutions unsuitable. It is urgent to use self-rectifying memristors to realize high-density three-dimensional arrays

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  • Self-rectification memristor array and preparation method and application thereof
  • Self-rectification memristor array and preparation method and application thereof
  • Self-rectification memristor array and preparation method and application thereof

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preparation example Construction

[0047] On the other hand, an embodiment of the present invention provides a method for preparing the above-mentioned self-rectifying memristor array, combining Figure 4 and Figure 7 As shown, it includes the following steps:

[0048] S1. On the substrate 000, use a preset mask to lithography the pattern of the first layer of the first electrode layer to prepare the first layer of the first electrode layer T101, and then grow the substrate 000 with the first electrode layer T101 Prepare the first layer of insulating layer 003 on it.

[0049] S2. Repeatedly and alternately grow the first electrode layer and the insulating layer until the predetermined number of layers is reached, such as Figure 5 As shown, the predetermined number of layers takes 4 layers as an example to obtain 4 first electrode layers (respectively T101, T201, T301 and T401) and 4 insulating layers 003.

[0050] Specifically, the first electrode layer can be prepared by sputtering, electron beam evaporat...

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Abstract

The invention belongs to the technical field of microelectronics, and particularly discloses a self-rectification memristor array and a preparation method and application thereof, the self-rectification memristor array comprises a first electrode layer array vertically stacked on a substrate, and each first electrode layer in the first electrode layer array is provided with an insulating layer; a groove is formed in the middle of each column in the first electrode layer array, and insulating layers are arranged on the two sides of each groove; a low-k dielectric layer, a high-k dielectric layer and a second electrode layer are sequentially arranged on the periphery of each column in the first electrode layer array from inside to outside. The grooves are formed in the first electrode layer array, so that the memristor array is formed, each memristor is composed of the first electrode, the low-k dielectric layer, the high-k dielectric layer and the second electrode which are transversely and sequentially distributed, the storage density of the memristors is greatly increased, meanwhile, the problem of current leakage in the array is solved, and the memristor array is suitable for commercial application and popularization.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and more specifically relates to a self-rectifying memristor array and a preparation method and application thereof. Background technique [0002] As a new type of device, memristor has the advantages of high integration density, low power consumption, low process complexity and multi-valued computing potential. However, in the three-dimensional integrated array, the problem of leakage current makes the memristor array still face great challenges. [0003] In order to solve the problem of leakage current in the array, two schemes have been proposed in the prior art. One is to suppress the leakage current by connecting a non-linear rectifier device externally to the memristor, such as 1T1R, 1S1R, and 1D1R; the other is to prepare its own Memristors that suppress leakage current effects, such as self-rectifying memristors, etc. The external series rectification device increases the proce...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00C23C14/08C23C14/16C23C14/34C23C16/40C23C16/455C23C28/00
CPCC23C14/165C23C14/34C23C14/083C23C16/405C23C16/45525C23C28/322C23C28/3455H10N70/026H10N70/8833
Inventor 李祎任升广倪润缪向水
Owner HUAZHONG UNIV OF SCI & TECH
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