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Uranium-doped bismuth silicate scintillation crystal and preparation method thereof

A technology of scintillation crystals and bismuth silicate, which is applied in crystal growth, chemical instruments and methods, self-solidification methods, etc., can solve the problems of low crystal light output and difficult control of crystal growth, and achieve the effect of inhibiting component separation

Pending Publication Date: 2022-03-25
SHANGHAI INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for improving the scintillation performance of bismuth silicate crystal and crystal growth method, so as to solve the problems of low light output of the crystal and difficult control of crystal growth.

Method used

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  • Uranium-doped bismuth silicate scintillation crystal and preparation method thereof
  • Uranium-doped bismuth silicate scintillation crystal and preparation method thereof

Examples

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Embodiment 1

[0027] A uranium-doped bismuth silicate scintillation crystal and a preparation method thereof, comprising the following steps:

[0028] 4N purity SiO 2 、 Bi 2 o 3 The raw materials are weighed and batched according to the stoichiometric ratio, ground and mixed evenly, and sintered at 820°C for 8 hours to obtain Bi 4 Si 3 o 12 Polycrystalline material; add 0.1mol% UO 2 , Grind and mix evenly, put it into a columnar Pt crucible with seed crystals, feed, inoculate, and grow in a zone furnace at 1150 ° C. The height of the melting zone is 70 mm, and the growth rate is 0.5 mm / h. After the growth is completed, the temperature is cooled to room temperature and then peeled off crucible to obtain cylindrical uranium-doped bismuth silicate crystals with high light output.

Embodiment 2

[0030] A method for preparing uranium-doped bismuth silicate scintillation crystals, comprising the following steps:

[0031] 4N purity SiO 2 、 Bi 2 o 3 The raw materials are weighed and batched according to the stoichiometric ratio, ground and mixed evenly, and sintered at 800°C for 12 hours to obtain Bi 4 Si 3 o 12 Polycrystalline material; add 1mol% UO 2, grind and mix evenly, put it into a columnar Pt crucible with a seed crystal, the thickness of the crucible is 0.2mm, place it in a ceramic tube, move it into the furnace at an appropriate height, set the temperature at 1150°C, and control the melting zone at 40mm. , inoculation, and growth with a growth rate of 0.2mm / h. After the growth was completed, the temperature was lowered to room temperature and the crucible was peeled off to obtain uranium-doped bismuth silicate crystals with high light output.

Embodiment 3

[0033] A method for preparing uranium-doped bismuth silicate scintillation crystals, comprising the following steps:

[0034] 4N purity SiO 2 、 Bi 2 o 3 The raw materials are weighed and batched according to the stoichiometric ratio, ground and mixed evenly, and sintered at 815°C for 10 hours to obtain Bi 4 Si 3 o 12 Polycrystalline material; add 0.5mol% UO 2 , Grind and mix evenly, put it into a square Pt crucible with a seed crystal, the thickness of the crucible is 0.2mm, feed, inoculate, and grow in a zone furnace at 1150°C, the height of the melting zone is 60mm, and the growth rate is 0.3mm / h. After the growth is over After cooling down to room temperature, the crucible was peeled off to obtain a uranium-doped square bismuth silicate crystal with high light output.

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Abstract

The invention belongs to the technical field of crystal growth, and discloses a uranium-doped bismuth silicate scintillation crystal and a preparation method thereof. The bismuth silicate scintillation crystal is characterized in that (1) the bismuth silicate scintillation crystal is a scintillation material, uranium ions are doped in the form of UO2, the light output of the crystal can be remarkably improved, the doping amount is 0.01-1 mol%, and the molecular formula of the bismuth silicate crystal is Bi4Si3O12; (2) selecting high-purity SiO2 and Bi2O3 as raw materials, burdening according to a stoichiometric ratio, preparing a Bi4Si3O12 polycrystal material by adopting a solid-phase sintering method, then adding UO2 into the Bi4Si3O12 polycrystal material according to the doping amount, uniformly mixing and sintering to obtain a uranium-doped Bi4Si3O12 polycrystal material; and (3) selecting a bismuth silicate seed crystal, fixing the seed crystal at a seed well part at the bottom of a crucible, filling the doped polycrystal material into the crucible, sealing, transferring into a ceramic tube, putting into a zone melting furnace, heating, preserving heat, inoculating, and descending and growing at a certain rate to obtain the uranium-doped high-light-output bismuth silicate scintillation crystal.

Description

technical field [0001] The invention belongs to the technical field of crystal growth, and specifically discloses a uranium-doped bismuth silicate scintillation crystal and a preparation method thereof. Background technique [0002] Scintillation crystal refers to a functional material crystal that can absorb high-energy particles or rays and emit scintillation light. It is usually used to detect X-rays, γ-rays and high-energy particles. It has great potential in the fields of high-energy physics, medical imaging, safety inspection and geological exploration Wide range of applications. At present, there are many kinds of inorganic scintillation crystals, mainly sodium iodide (NaI:Tl), cesium iodide (CsI:Tl), bismuth germanate (Bi 4 Ge 3 o 12 ), lutetium silicate (Lu 2 SiO 5 : Ce), lead tungstate (PbWO 4 )Wait. Among them, bismuth germanate (BGO) crystal has a low melting point and excellent scintillation performance. It is a kind of scintillation crystal material with...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/34C30B11/14C30B28/02G01T1/202
CPCC30B29/34C30B11/14C30B11/006C30B28/02G01T1/2023
Inventor 徐家跃田甜张炎潘芸芳李志超张彦申慧马云峰陈媛芝
Owner SHANGHAI INST OF TECH