LED chip and preparation method thereof

Abstract

The invention discloses an LED chip and a preparation method thereof, and the preparation method of the LED chip comprises the steps: providing a substrate; providing a substrate; forming an epitaxial structure and an annealing layer; the epitaxial structure is located on the upper surface of the substrate, the annealing layer is located on the upper surface of the epitaxial structure, and the annealing layer exposes the epitaxial structure; and forming a first electrode on the upper surface of the annealing layer and on the exposed epitaxial structure, and injecting electrons into the epitaxial structure by the annealing layer during annealing treatment to improve the hole concentration in the epitaxial structure, thereby improving the uneven distribution of electrons and holes, avoiding the problem that the electrons overflow into the epitaxial structure due to high electron concentration and fast migration, and improving the performance of the epitaxial structure. The ionization efficiency and radiation recombination efficiency of holes are improved, and the efficiency sudden drop effect under large current is improved.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to an LED chip and a preparation method thereof. Background technique [0002] GaN-based light-emitting diode (LED) is a semiconductor light-emitting device, which has the advantages of long life, low energy consumption, small size, and high reliability. It has become the most promising lighting source and an important trend in leading lighting technology; The problem of low intensity and efficiency, further improving the luminous intensity and light efficiency of LEDs is the goal of the development of LED lighting technology. [0003] In traditional GaN-based LED chips, the mobility of electrons is faster than that of holes, and the concentration of free electrons is higher than that of holes, and the doping of the p-type layer on the top layer of the chip is difficult to obtain high hole concentrations due to the passivation of hydrogen atoms. , easily lead to ...

AI Technical Summary

Problems solved by technology

[0002] GaN-based light-emitting diode (LED) is a semiconductor light-emitting device, which has the advantages of long life, low energy consumption, small size, and high reliability. It has become the most promising lighting source and an important trend in leading lighting technology; The problem of low intensity and efficiency, further improving the luminous intensity and luminous efficiency of LED is the goal of the development of LED lighting technology

[0003] In traditional GaN-based LED chips, the mobility of electrons is faster than that of holes, and the concentration of free electrons is higher than that of holes, and the doping of the p-type layer on the top layer of the chip is difficult to obtain high hole concentrations due to the passivation of hydrogen atoms. , easily lead to uneven distribution of electrons and holes in the multi-quantum well light-emitting layer (MQW), the holes are concentrated in the MQW layer closer to the p-type layer, and the gradual attenuation in the n-type direction is not conducive to the recombination of electrons and holes , reduce the luminous efficiency of the LED chip

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